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NXH25T120L2Q1PG

Onsemi

NXH25T120L2Q1PG by Onsemi

NXH25T120L2Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 77ns ton. Ideal for POWER CONTROL applications, it has a max power dissipation of 81W and operates b/w -40 to 150 °C.

Median Price

$78.980

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 21 parts In-Stock

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Rochester

USA . 21 parts In-Stock

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$78.980

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$70.670

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$66.510

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$78.980

$70.670

$66.510

Flip Electronics (Authorized)

USA . 21 parts In-Stock

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Digiode

USA . 449 parts In-Stock

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$83.581

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Vyrian

USA . 7,416 parts In-Stock

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Corphita

USA . 324 parts In-Stock

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$79.182

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Corohmni

South Africa . 214 parts In-Stock

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$87.980

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Microchip USA

USA . 8,209 parts In-Stock

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$229.710

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TANS Electronics

Latvia . 7,934 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,352 parts In-Stock

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Problanco Electronics

Mexico . 3,063 parts In-Stock

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SupplyDigital Components

Austria . 2,942 parts In-Stock

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Kulean Microsystems

USA . 2,295 parts In-Stock

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UHIMA Technologies

Türkiye . 940 parts In-Stock

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Overview

Enhance your power control applications with the NXH25T120L2Q1PG by Onsemi, a top-quality Insulated Gate Bipolar Transistor (IGBT) designed for maximum performance and efficiency. With a complex configuration and 12 elements, this N-Channel transistor offers a nominal turn-off time of 551 ns and a maximum collector-emitter voltage of 1200 V. Its flange mount package style ensures easy installation, while its 81 W maximum power dissipation guarantees reliable operation. Trust Onsemi's expertise in semiconductor manufacturing and elevate your projects with the value and benefits of this advanced IGBT solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally offer better performance and efficiency compared to P-channel types, making this a good choice for power control applications.

Configuration: COMPLEX

The complex configuration of this IGBT allows for versatile applications and better control over power systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, which ensures reliable and efficient performance in power management systems.

Surface Mount: YES

The surface mount capability makes it easier to integrate this IGBT into electronic circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 2.5 V

The low VCEsat value results in minimal power loss and improved efficiency in power control operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and handling in a variety of applications.

No. of Elements: 12

The presence of 12 elements provides enhanced performance and power handling capabilities in complex power control systems.

Nominal Turn Off Time (toff): 551 ns

The fast turn off time enables quick switching and precise control over the power output, reducing the risk of damage to connected devices.

No. of Terminals: 44

The high number of terminals allows for versatile connectivity and control options in power control applications.

Maximum Power Dissipation (Abs): 81 W

High power dissipation capacity ensures that the IGBT can handle high loads without overheating or performance degradation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure attachment and heat dissipation capabilities for reliable operation in power systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating makes this IGBT suitable for high-voltage power control applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in power control operations.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage rating provides improved control and stability in power management systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in harsh environmental conditions.

Maximum Collector Current (IC): 25 A

The high maximum collector current rating enables the IGBT to handle large electrical loads with ease.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

The threshold voltage ensures precise control over the switching behavior of the IGBT in power control applications.

Terminal Position: UPPER

The upper terminal position simplifies connectivity and wiring in power control systems.

Case Connection: ISOLATED

The isolated case connection provides added safety and protection against electrical hazards in power systems.

Nominal Turn On Time (ton): 77 ns

The fast turn on time allows for quick activation of the IGBT, ensuring efficient power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH25T120L2Q1PG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X44

No. of Elements:

12

No. of Terminals:

44

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

551 ns

Nominal Turn On Time (ton):

77 ns

Maximum VCEsat:

2.5 V

Trade Compliance

NXH25T120L2Q1PG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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