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NXH25C120L2C2SG

Onsemi

NXH25C120L2C2SG by Onsemi

NXH25C120L2C2SG by Onsemi is an IGBT transistor with 1200V VCEsat, 25A IC, and 320ns toff. Ideal for motor control applications due to its N-CHANNEL polarity and BRIDGE configuration with built-in diode. Operates in temperatures from -40 °C to 150°C, making it suitable for various industrial settings.

Median Price

$29.080

Lifecycle Status

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12

In-Stock Inventory

1k+

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Arrow

USA . 11 parts In-Stock

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$28.740

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$28.740

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Verical

USA . 11 parts In-Stock

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$28.740

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$28.740

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Chip1Stop

Japan . 11 parts In-Stock

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$29.420

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$29.420

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Farnell

UK . 5 parts In-Stock

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$41.130

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$41.130

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Mouser Electronics

USA . 27 parts In-Stock

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$69.710

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$64.750

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Element14

Singapore . 5 parts In-Stock

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$82.010

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$80.360

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DigiKey

USA . 36 parts In-Stock

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$24.910

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Rochester

USA . 18 parts In-Stock

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$7.070

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$6.320

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$5.950

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$6.320

$5.950

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Digiode

USA . 1,871 parts In-Stock

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$26.125

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Vyrian

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Corphita

USA . 1,600 parts In-Stock

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$24.750

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$24.750

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Corohmni

South Africa . 248 parts In-Stock

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$27.500

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Continental Prestige Electronics

USA . 5 parts In-Stock

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$29.030

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Microchip USA

USA . 3,284 parts In-Stock

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$174.593

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 6,959 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

Mexico . 871 parts In-Stock

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UHIMA Technologies

Türkiye . 291 parts In-Stock

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GreenTree Electronics

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Overview

Experience unparalleled performance and reliability with the NXH25C120L2C2SG by Onsemi, a leading manufacturer in the industry. As part of the Insulated Gate Bipolar Transistors (IGBT) category, this product is designed for motor control applications, offering a seamless blend of power and efficiency. With a maximum collector-emitter voltage of 1200 V and a maximum collector current of 25 A, this transistor ensures optimal performance even in the most demanding environments. Trust Onsemi to deliver superior quality and unmatched value with the NXH25C120L2C2SG, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drops and higher efficiency compared to P-channel IGBTs, making them suitable for motor control applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

This configuration allows for efficient power conversion and control in three-phase motor control systems, with built-in protection features like thermistors.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimized performance and efficiency in controlling electric motors.

Maximum VCEsat: 2.4 V

Low VCEsat minimizes power dissipation and improves efficiency in switching operations, making this IGBT suitable for high power applications.

Package Shape: RECTANGULAR

Rectangular packages are easy to mount and provide good thermal characteristics, enhancing the overall reliability of the device.

No. of Elements: 7

With 6 elements and a built-in diode, this IGBT offers comprehensive functionality for motor control applications.

Nominal Turn Off Time (toff): 320 ns

Fast turn-off time improves the switching speed of the IGBT, reducing power losses and improving efficiency in motor control applications.

No. of Terminals: 26

Multiple terminals allow for easy connectivity and integration into complex motor control systems.

Package Style (Meter): IN-LINE

In-line packages are compact and space-efficient, making them suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand a wide range of operating conditions, offering reliability in harsh environments.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating allows for handling large voltages, making this IGBT suitable for high-power motor control applications.

Transistor Element Material: SILICON

Silicon is widely used in semiconductor devices due to its excellent electrical properties, ensuring high performance and reliability in the IGBT.

Maximum Gate-Emitter Voltage: 20 V

This voltage rating ensures safe operation of the gate driver circuitry, protecting the IGBT from over-voltage conditions.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this IGBT can operate in cold environments without sacrificing performance or reliability.

Maximum Collector Current (IC): 25 A

High maximum collector current rating allows the IGBT to handle large currents, making it suitable for high-power motor control applications.

Maximum Gate-Emitter Threshold Voltage: 6.8 V

Low gate-emitter threshold voltage ensures easy and efficient control of the IGBT, improving overall system performance.

Terminal Position: DUAL

Dual terminal positions allow for flexibility in connectivity, making it easier to integrate the IGBT into various motor control systems.

Case Connection: ISOLATED

Isolated case connection provides protection against voltage spikes and enhances safety in motor control applications.

Nominal Turn On Time (ton): 128 ns

Fast turn-on time improves the response time of the IGBT, enhancing the efficiency and performance of motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH25C120L2C2SG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PDIP-T26

No. of Elements:

7

No. of Terminals:

26

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

320 ns

Nominal Turn On Time (ton):

128 ns

Maximum VCEsat:

2.4 V

Trade Compliance

NXH25C120L2C2SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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