Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FGHL50T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max operating temperature of 175 °C and a max collector current of 80A.
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Provides good protection and insulation for the internal components, ensuring durability and reliability.
Offers low on-state voltage drop and high switching speed, making it suitable for power control applications.
Simplifies circuit design and saves space by integrating a diode within the transistor.
Designed specifically for power control applications, ensuring efficient and reliable performance.
Low VCEsat minimizes power loss and improves overall efficiency of the transistor.
Allows for easy mounting and installation in various electronic devices and systems.
Facilitates easy soldering and connection to a circuit board for secure and stable operation.
High power dissipation capability enables the transistor to handle large amounts of power without overheating.
Allows for easy mounting on a flange for secure and stable installation.
Can operate effectively at high temperatures, ensuring reliable performance in demanding environments.
Can handle high collector-emitter voltages, making it suitable for high voltage applications.
Silicon-based construction provides excellent performance characteristics such as high temperature tolerance and reliability.
Can withstand high gate-emitter voltages, ensuring stable operation in a variety of applications.
Capable of functioning in low temperature environments without compromising performance.
High collector current capability makes it suitable for applications requiring high power output.
Low gate-emitter threshold voltage allows for efficient and precise control of the transistor.
Matte tin finish provides good conductivity and corrosion resistance, ensuring long-term reliability.
Simplified terminal configuration makes it easy to connect and integrate into circuits.
Collector case connection simplifies circuit design and layout, improving overall efficiency.
Insulated Gate Bipolar Transistors (IGBT) FGHL50T65MQD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Maximum VCEsat:
FGHL50T65MQD Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Dimension/Color Change 24/Feb/2021 Postponed Qualification 27/Dec/2022
PCN Assembly/Origin - Mult Dev 19/Jun/2023
PCN Packaging - Packing quantity increase 28/Dec/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148W-T
Rectron
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
BSS138
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Plessey Semiconductors Discrete Components Div
Other Transistors;
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
FGH40N65UFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
F4-75R06W1E3
Infineon Technologies
F4-75R06W1E3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 275W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 45ns and low toff of 330ns. The COMPLEX configuration and RECTANGULAR package make it suitable for high-power systems requiring efficient switching capabilities.
7MBR150VR120-50
Fuji Electric
Fuji Electric's 7MBR150VR120-50 is an N-CHANNEL IGBT with 150A IC, 1200V VCE, and 885W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 390ns and low VCEsat of 2.95V, making it suitable for high-power systems requiring efficient switching capabilities.
IRG4BC30W-SPBF
IRG4BC30W-SPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 23A. It has a nominal turn-off time of 300ns, making it suitable for power control applications requiring fast switching speeds. With a package style of SMALL OUTLINE and surface mount capability, it offers efficient power dissipation up to 100W in various electronic devices.
ISL9V2040D3ST
ISL9V2040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 390V and can handle a max collector current of 10A. This IGBT comes in a small outline package style with gull wing terminals for surface mount assembly.
NGTB25N120FL3WG
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
IKW40N120T2FKSA1
IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.
F475R12KS4B11BOSA1
F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
BSM150GB120DLC
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 300 A; Maximum Operating Temperature: 125 Cel;
IXDN55N120D1
Littelfuse
IXDN55N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 450W Pd. Ideal for motor control applications due to its built-in diode, UL recognition, and fast turn-on/off times of 170ns and 570ns respectively.
HGTG20N60A4D
HGTG20N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 28ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150°C in a RECTANGULAR package style.
STGB14NC60KDT4
STMicroelectronics
STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
HGTG40N60C3
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
FGH75T65SHDTLN4
FGH75T65SHDTLN4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max power dissipation of 455W and a max operating temperature of 175°C.
FGH60N60SMD_F085
Fairchild Semiconductor's FGH60N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 66ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a plastic/epoxy package. The transistor has a nominal turn-off time of 139ns and meets AEC-Q101 standards.
APT200GN60J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.
IRG7PH50K10DPBF
Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.
IXBK55N300
IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
APT50GP60J
Microchip Technology
APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
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FGHL50T65SQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FGHL50T65SQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;
FGHL75T65MQDT
FGHL75T65MQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175 °C, and a turn-off time of 184ns.
FGHL40T65MQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3;
FGHL50T65MQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
FGHL75T65LQDTL4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.35 V;
FGHL50T65LQDTL4
Insulated Gate Bipolar Transistors;
FGHL75T65MQDTL4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.8 V;
FGHL40T120SWD
FGHL40T65MQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65MQDTL4
FGHL50T65MQDTL4 by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 1.8V VGE(th). Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
FGHL75T65LQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65LQDT
FGHL75T65MQD
FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.
FGHL40T65LQDT
FGHL40S65UQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 231 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.7 V;
FGHL40T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
FGHL75T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
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