Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.
Median Price
$4.880
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14
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1k+
Rochester
1+ parts
$2.140
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$2.010
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$1.820
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Farnell
$3.470
$2.040
$1.510
DigiKey
$2.725
$1.900
$1.772
Newark
$5.030
$2.560
$2.320
Element14
$5.540
$3.340
$2.690
Mouser Electronics
$5.720
$2.050
Chip1Stop
$12.800
Arrow
$2.618
$1.805
$1.766
Verical
Digiode
$2.033
Nova Conductors
$2.421
Chip Stock
Vyrian
Flip Electronics
Aztec Data Supply Inc.
$0.957
Ampacity Inc.
Semicontronic
$1.774
$1.765
Corphita
$1.926
Corohmni
Argo Parts USA
Continental Prestige Electronics
$3.070
$2.260
$1.620
Component Stockers USA
$3.740
$2.960
Microchip USA
$26.845
Problanco Electronics
Kulean Microsystems
SupplyDigital Components
TANS Electronics
UHIMA Technologies
GreenTree Electronics
Authorized Procurement Solutions
iodParts Technologies Inc.
Netroflash
$2.372
$2.300
$2.251
Provides durability and protection for the internal components of the IGBT.
Allows for efficient power control and performance.
Simplifies installation and operation in various applications.
Designed specifically for power control applications, ensuring optimal performance.
Low saturation voltage helps reduce power losses and improves efficiency.
Simple and straightforward terminal configuration for ease of use.
High power dissipation capability allows for handling of heavy loads and high power applications.
Wide operating temperature range for versatile use in different environments.
High voltage rating ensures safety and reliability in high voltage circuits.
Adequate gate-emitter voltage rating for efficient gate control.
High collector current rating allows for handling of large current loads.
Optimal threshold voltage for gate control and switching performance.
Ensures good electrical conductivity and solderability for reliable connections.
Simplified terminal layout for easier installation and connection.
Insulated Gate Bipolar Transistors (IGBT) FGHL50T65SQ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum VCEsat:
FGHL50T65SQ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Dimension/Color Change 24/Feb/2021
PCN Assembly/Origin - Mult Dev 19/Jun/2023
PCN Packaging - Packing quantity increase 28/Dec/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Toshiba
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
Promax-johnton
1N4148
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
American Power Devices
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
Good-ark Electronics
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
LM358D-T
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
FP40R12KT3BOSA1
Infineon Technologies
FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
SKM400GB12E4
Semikron International
SKM400GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 618A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 681ns and high Max Collector-Emitter Voltage of 1200V.
IKW30N60H3
IKW30N60H3 by Infineon is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 262ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temp of 175°C in a RECTANGULAR package style.
STGW30NC120HD
STMicroelectronics
STGW30NC120HD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 170W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 928ns.
IXA70I1200NA
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED;
F3L300R12ME4B23BOSA1
F3L300R12ME4B23BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 450A. This IGBT is designed for power control applications with UL approval.
FS400R07A1E3
FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
V23990-K230-F40-/1A/-PM
Vincotech
Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.
IRG7PH42UD1MPBF
International Rectifier
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;
APT85GR120B2
Microchip Technology
Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.
2MBI200VA-060-50
Fuji Electric
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;
SGL160N60UFDTU
SGL160N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 160A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 262ns.
APT50GR120JD30
Microsemi
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IXLF19N250A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
IXGH6N170A
Littelfuse
IXGH6N170A by Littelfuse is an N-CHANNEL IGBT transistor with 1700V max collector-emitter voltage, 75W power dissipation, and 65ns fall time. Ideal for power control applications due to its single configuration and through-hole terminal form.
IXYH50N120C3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;
IKD06N60RAATMA2
IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
FP25R12KE3BOSA1
FP25R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 610ns nominal turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and isolated case connection.
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
STGWA40H60DLFB
STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
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FGHL50T65SQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;
FGHL75T65MQDT
FGHL75T65MQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175 °C, and a turn-off time of 184ns.
FGHL40T65MQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3;
FGHL50T65MQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
FGHL75T65LQDTL4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.35 V;
FGHL50T65LQDTL4
Insulated Gate Bipolar Transistors;
FGHL75T65MQDTL4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.8 V;
FGHL40T120SWD
FGHL40T65MQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65MQDTL4
FGHL50T65MQDTL4 by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 1.8V VGE(th). Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
FGHL75T65LQDT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65LQDT
FGHL75T65MQD
FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.
FGHL40T65LQDT
FGHL50T65MQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGHL40S65UQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 231 W; Maximum Collector Current (IC): 80 A; Maximum VCEsat: 1.7 V;
FGHL40T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGHL50T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
FGHL75T65LQD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
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