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FGHL75T65MQD

Onsemi

FGHL75T65MQD by Onsemi

FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.

Median Price

$7.300

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 381 parts In-Stock

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$7.300

100+ parts

$3.470

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381

$7.300

$3.470

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DigiKey

USA . 370 parts In-Stock

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$7.300

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$3.036

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370

$7.300

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$3.036

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Chip1Stop

Japan . 203 parts In-Stock

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$19.400

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$8.570

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203

$19.400

$8.570

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Verical

USA . 6,750 parts In-Stock

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$3.055

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6,750

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$3.055

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Flip Electronics (Authorized)

USA . 450 parts In-Stock

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450

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Digiode

USA . 2,274 parts In-Stock

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$6.166

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Vyrian

USA . 7,632 parts In-Stock

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Flip Electronics

USA . 450 parts In-Stock

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450

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Distributors (Availability)

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Native Components

USA . 408 parts In-Stock

1+ parts

$0.102

100+ parts

-

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$0.098

408

$0.102

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$0.098

Northwest PG Solutions

USA . 1,385 parts In-Stock

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$0.112

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$0.099

1,385

$0.112

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$0.099

Ampacity Inc.

Singapore . 74 parts In-Stock

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$5.520

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74

$5.520

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Corphita

USA . 608 parts In-Stock

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$5.841

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608

$5.841

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Corohmni

South Africa . 117 parts In-Stock

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$6.490

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$6.490

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Microchip USA

USA . 4,992 parts In-Stock

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$17.864

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QUARKTWIN TECHNOLOGY LTD

USA . 26,436 parts In-Stock

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Problanco Electronics

Mexico . 8,073 parts In-Stock

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Kulean Microsystems

USA . 7,018 parts In-Stock

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TANS Electronics

Latvia . 6,551 parts In-Stock

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Lixinc

USA . 6,157 parts In-Stock

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Perfect Parts

USA . 5,235 parts In-Stock

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SupplyDigital Components

Austria . 1,266 parts In-Stock

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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463

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Enhance your power control applications with the FGHL75T65MQD by Onsemi. As a leading manufacturer of Insulated Gate Bipolar Transistors, Onsemi delivers top-quality products that provide reliable performance and efficiency. This N-CHANNEL transistor with a built-in diode offers a maximum VCEsat of 1.8V and can handle up to 80A of collector current. With a maximum operating temperature of 175°C and a maximum collector-emitter voltage of 650V, this transistor is perfect for high-power applications. Trust Onsemi to provide you with the best solutions for your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring long-term reliability.

Maximum VCEsat: 1.8 V

Low VCEsat results in lower power dissipation and higher efficiency in power control applications.

Nominal Turn Off Time (toff): 280 ns

Fast turn-off time allows for precise control and optimization of power switching processes.

Maximum Power Dissipation (Abs): 375 W

High power dissipation capability allows for use in demanding applications without risk of overheating.

Maximum Collector-Emitter Voltage: 650 V

High voltage capability makes it suitable for a wide range of power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGHL75T65MQD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

280 ns

Nominal Turn On Time (ton):

92 ns

Maximum VCEsat:

1.8 V

Trade Compliance

FGHL75T65MQD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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