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FGHL75T65MQDTL4

Onsemi

FGHL75T65MQDTL4 by Onsemi

FGHL75T65MQDTL4 by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications, it features a built-in diode, Kelvin sensor, and fast turn-off time of 213ns. This rectangular package with through-hole terminals operates b/w -55 to 175 °C.

Median Price

$5.567

Lifecycle Status

Suppliers In-Stock

11

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1k+

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Arrow

USA . 395 parts In-Stock

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$1.688

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395

$1.688

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Farnell

UK . 432 parts In-Stock

1+ parts

$3.920

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$2.940

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$2.880

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432

$3.920

$2.940

$2.880

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Chip1Stop

Japan . 420 parts In-Stock

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$4.260

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420

$4.260

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RS (Exports)

UK . 440 parts In-Stock

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$5.164

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$4.751

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$5.164

$4.751

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Mouser Electronics

USA . 432 parts In-Stock

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$5.970

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432

$5.970

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Newark

USA . 432 parts In-Stock

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$6.300

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Element14

Singapore . 432 parts In-Stock

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$6.590

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$4.940

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$4.870

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432

$6.590

$4.940

$4.870

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DigiKey

USA . 327 parts In-Stock

1+ parts

$7.530

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$4.363

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$3.296

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327

$7.530

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$3.296

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Verical

USA . 395 parts In-Stock

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Digiode

USA . 1,792 parts In-Stock

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$3.037

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$3.037

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Vyrian

USA . 1,584 parts In-Stock

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$3.197

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Corohmni

South Africa . 305 parts In-Stock

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$2.420

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Corphita

USA . 1,712 parts In-Stock

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$2.877

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$2.877

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Component Stockers USA

USA . 1,649 parts In-Stock

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$4.430

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$3.610

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1,649

$4.430

$3.610

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Continental Prestige Electronics

USA . 444 parts In-Stock

1+ parts

$6.080

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$4.070

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444

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Native Components

USA . 333 parts In-Stock

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$16.776

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333

$16.776

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Northwest PG Solutions

USA . 1,108 parts In-Stock

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$18.454

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$16.608

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$18.454

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Microchip USA

USA . 4,135 parts In-Stock

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$19.150

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$18.880

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$18.740

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$18.600

4,135

$19.150

$18.880

$18.740

$18.600

TANS Electronics

Latvia . 8,334 parts In-Stock

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SupplyDigital Components

Austria . 6,903 parts In-Stock

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Problanco Electronics

Mexico . 4,685 parts In-Stock

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Perfect Parts

USA . 1,725 parts In-Stock

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Kulean Microsystems

USA . 1,442 parts In-Stock

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GreenTree Electronics

Israel . 400 parts In-Stock

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Authorized Procurement Solutions

USA . 320 parts In-Stock

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iodParts Technologies Inc.

India . 280 parts In-Stock

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UHIMA Technologies

Türkiye . 56 parts In-Stock

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Overview

Enhance the power control in your applications with the FGHL75T65MQDTL4 by Onsemi, a high-quality Insulated Gate Bipolar Transistor designed to deliver exceptional performance. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor offers a single configuration with a built-in diode and Kelvin sensor, making it ideal for various power control tasks. With a maximum collector-emitter voltage of 650V and a maximum power dissipation of 375W, this transistor ensures reliable operation even in demanding conditions. Upgrade your systems with the FGHL75T65MQDTL4 and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Efficiently controls power in electronic circuits, allowing for better performance and energy efficiency.

Maximum Power Dissipation (Abs): 375 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 650 V

Allows for handling high voltage levels, making it versatile for a variety of circuit designs.

Maximum Gate-Emitter Voltage: 20 V

Provides a safe operating range for the gate voltage, protecting the transistor from damage.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGHL75T65MQDTL4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

213 ns

Nominal Turn On Time (ton):

61 ns

Maximum VCEsat:

1.8 V

Trade Compliance

FGHL75T65MQDTL4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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