Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FGH40T100SMD-F155 by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 80A IC, and 333W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
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The use of plastic/epoxy as body material makes the IGBT lightweight and cost-effective, which is beneficial for various applications.
N-channel IGBTs generally have better conductivity and efficiency compared to P-channel ones, making them suitable for power control applications.
Having a built-in diode simplifies circuit design and improves efficiency, making this IGBT a convenient choice for power control applications.
Designed specifically for power control applications, this IGBT is highly efficient and reliable in managing power flow.
The low rise time ensures fast switching speeds, improving the overall performance and efficiency of the IGBT in power control applications.
With a low VCEsat value, this IGBT minimizes power loss and heat generation, making it energy-efficient for power control applications.
Rectangular packages are easy to mount and integrate into existing systems, providing convenience and versatility for installation.
Through-hole terminals offer secure connections and ease of soldering, ensuring a reliable electrical connection in power control applications.
The low fall time indicates quick turn-off speed, reducing switching losses and improving overall efficiency in power control applications.
The nominal turn-off time affects the switching speed and efficiency of the IGBT, making it a crucial parameter for power control applications.
Having 3 terminals simplifies the connection and integration of the IGBT in power control circuits, enhancing ease of use and installation.
The high maximum power dissipation value indicates the IGBT's ability to handle large power loads, making it suitable for high-power applications.
Flange mount packages offer mechanical stability and heat dissipation, making the IGBT reliable and durable for power control applications.
With a high maximum operating temperature, this IGBT can withstand elevated temperatures without compromising performance, ensuring reliability in power control applications.
The high collector-emitter voltage rating allows the IGBT to handle high voltage levels, making it suitable for a wide range of power control applications.
Silicon is a common and reliable semiconductor material, offering good electrical properties and durability for long-term performance in power control applications.
The fast turn-on time ensures quick response and high efficiency in power control applications, enhancing the overall performance of the IGBT.
The maximum gate-emitter voltage ensures proper gate control and reliable operation of the IGBT in power control applications, enhancing overall performance and efficiency.
With a low minimum operating temperature, this IGBT can function in harsh environmental conditions, making it suitable for a wide range of power control applications.
The high collector current rating allows the IGBT to handle large current loads, making it suitable for high-power applications where high current flow is required.
The maximum gate-emitter threshold voltage affects the turn-on behavior of the IGBT, ensuring reliable and consistent operation in power control applications.
The maximum turn-off time determines the switching speed and efficiency of the IGBT, impacting overall performance in power control applications.
Having a single terminal position simplifies the connection and integration of the IGBT in power control circuits, enhancing ease of use and installation.
The case connection at the collector terminal provides efficient heat dissipation and electrical connectivity, ensuring reliable performance in power control applications.
The nominal turn-on time affects the switching speed and efficiency of the IGBT, making it an important parameter for power control applications.
Insulated Gate Bipolar Transistors (IGBT) FGH40T100SMD-F155 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Rise Time (tr):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Nominal Turn Off Time (toff):
Maximum Turn On Time (ton):
Nominal Turn On Time (ton):
Maximum VCEsat:
FGH40T100SMD-F155 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 30/Sep/2022
PCN Design/Specification - Dimension/Color Change 24/Feb/2021 Logo 17/Aug/2017
PCN Assembly/Origin - Wafer Fab Change 27/Dec/2022
PCN Packaging - Mult Devices 24/Oct/2017 Packing quantity increase 28/Dec/2020
PCN Part Number - Mult Device Part Number Chg 30/May/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
CRCW04020000Z0EDHP
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
BAV99
Kingwell Technonlogy
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
LM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Excel (Suzhou) Semiconductor
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
SMBJ18CA
Semtech
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Shanghai Lunsure Electronic Technology
National Semiconductor
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
LM555CN
Rochester Electronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
2PS13512E43W35222NOSA1
Infineon Technologies
2PS13512E43W35222NOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, suitable for POWER CONTROL applications. It has a max operating temperature of 55°C and min of -25°C, housed in a RECTANGULAR MICROELECTRONIC ASSEMBLY package. The transistor's SILICON material and ISOLATED case connection enhance its performance.
FS25R12YT3BOMA1
Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
FGH40N60UFDTU
FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.
IXXX300N60B3
Littelfuse
The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
IRG4PC50FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
FF450R12ME4BOSA1
FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
FS100R12PT4BOSA1
FS100R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a max voltage of 1200V, current of 135A, and turn off time of 600ns. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities.
IRG4PC50UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
APT45GP120J
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
CM900DU-24NF
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
IGA03N120H2XKSA1
Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
BSM50GP120
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 35;
IXXX110N65B4H1
Littelfuse IXXX110N65B4H1 is an N-CHANNEL IGBT with 650V VCEsat, 250A IC, and 880W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns. Operates b/w -55°C to 175°C temperature range.
APT100GN60B2G
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Case Connection: COLLECTOR;
IXGN50N120C3H1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 95 A; Nominal Turn Off Time (toff): 485 ns;
SKM400GB126D
Semikron International
Semikron International's SKM400GB126D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it ensures efficient performance. With fast Nominal Turn Off Time (toff) of 760ns, this device operates in temperatures ranging from -40 to 150 °C, making it suitable for various industrial power systems.
FGH60N60SFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel;
IRG4BC20WPBF
IRG4BC20WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 60W. It has a nominal turn-off time of 300ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-temperature environments up to 150°C.
BSM50GP120 by Infineon: N-CHANNEL IGBT with VCEsat of 2.55V, IC of 80A, and Pmax of 360W. Ideal for power electronics applications requiring high voltage (1200V) and current handling capabilities in complex configurations.
FGL60N100BNTD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
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FGH40T100SMD-F155
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FGH40N60SMD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FGH40N60SMD by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 349W Ptot. Ideal for power control applications due to its fast tr of 28ns and tf of 17ns. It comes in a FLANGE MOUNT package with through-hole terminals.
FGH40T120SMD
Micross Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 80 A; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
FGH40T120SMD by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at temperatures up to 175°C.
FGH40N60SMDF
FGH40N60SMDF by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 80A. It has a power dissipation of 349W and is used for power control applications due to its fast rise time (28ns) and fall time (17ns).
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
FGH40T120SMDL4
FGH40T120SMDL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.4V and a max IC of 80A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -55 to 175 °C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T4;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 110 ns;
FGH40T120SMD-F155
FGH40T120SMD-F155 by Onsemi is an N-CHANNEL IGBT with 555W power dissipation, 175°C max temp, and 1200V collector-emitter voltage. Ideal for high-power applications like motor drives, inverters, and industrial equipment due to its 80A collector current capacity and 7.5V gate-emitter threshold voltage.
FGH40T120SMD_F155
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 25 V; Terminal Finish: MATTE TIN;
FGH40N60SMDF_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Peak Reflow Temperature (C): NOT SPECIFIED;
FGH40N60SMDF_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 349W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates in temperatures ranging from -55°C to 175°C, making it suitable for various industrial uses.
FGH40N60SMDF-F085
FGH40N60SMDF-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.5V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 123ns, tf of 20ns, and can handle up to 349W power dissipation. Operating b/w -55°C to 175°C, it features a max VCE of 600V and gate-emitter voltage of 20V.
FGH40N60SMD_F085
Fairchild Semiconductor's FGH40N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 349W Ptot. Ideal for power control applications, it features a tr of 36.4ns, tf of 81ns, and toff of 172.5ns. This single transistor with built-in diode operates up to 175°C and complies with AEC-Q101 standards.
FGH40N60SMD-F085
FGH40N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max power dissipation of 349W. Ideal for power control applications, it features a single configuration with built-in diode and operates at temperatures up to 175°C.
FGH40N60SFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR;
FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.
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