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NXH35C120L2C2SG

Onsemi

NXH35C120L2C2SG by Onsemi

NXH35C120L2C2SG by Onsemi is an N-CHANNEL IGBT with 7 elements, including a brake IGBT and three-phase diode bridge. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications, this IGBT operates b/w -40°C to 150°C temperature range.

Median Price

$81.680

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 4 parts In-Stock

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$58.100

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$58.100

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Arrow

USA . 5 parts In-Stock

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$70.970

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5

$70.970

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Chip1Stop

Japan . 5 parts In-Stock

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$82.470

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$82.470

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Element14

Singapore . 4 parts In-Stock

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$130.510

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$130.510

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Rochester

USA . 882 parts In-Stock

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$80.890

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$72.380

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$68.120

882

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$80.890

$72.380

$68.120

Verical

USA . 870 parts In-Stock

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$101.112

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$90.475

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$85.150

870

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$90.475

$85.150

DigiKey

USA . 270 parts In-Stock

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RS (Exports)

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Flip Electronics (Authorized)

USA . 2 parts In-Stock

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Digiode

USA . 1,202 parts In-Stock

1+ parts

$72.789

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$72.789

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Vyrian

USA . 8,238 parts In-Stock

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Flip Electronics

USA . 2 parts In-Stock

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Continental Prestige Electronics

USA . 5 parts In-Stock

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$52.910

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$52.910

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Corphita

USA . 2,478 parts In-Stock

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$68.958

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$68.958

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Corohmni

South Africa . 247 parts In-Stock

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$76.620

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Microchip USA

USA . 9,160 parts In-Stock

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$159.900

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$159.900

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Kulean Microsystems

USA . 4,794 parts In-Stock

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Problanco Electronics

Mexico . 4,475 parts In-Stock

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4,475

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TANS Electronics

Latvia . 3,941 parts In-Stock

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Perfect Parts

USA . 2,522 parts In-Stock

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SupplyDigital Components

Austria . 1,336 parts In-Stock

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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Overview

Unleash the power of the Onsemi NXH35C120L2C2SG Insulated Gate Bipolar Transistor (IGBT) - a top-quality product designed for efficient power control applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this IGBT offers unparalleled reliability and performance. Ideal for use in various industries, this IGBT facilitates seamless power management with its unique configuration and built-in diode. Experience the value of superior technology with the NXH35C120L2C2SG - your ultimate solution for optimized power control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the IGBT, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have better performance and efficiency compared to P-Channel IGBTs.

Transistor Application: POWER CONTROL

This IGBT is specifically designed for power control applications, making it suitable for a wide range of industrial uses.

Maximum VCEsat: 2.4 V

The low VCEsat value indicates minimal power losses in the IGBT, resulting in high efficiency.

Nominal Turn Off Time (toff): 485 ns

The fast turn-off time ensures quick and precise power switching, increasing the overall performance of the device.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the IGBT to be used in a variety of environments without compromising its performance.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating makes this IGBT suitable for high-power applications where voltage levels are critical.

Maximum Collector Current (IC): 35 A

The high collector current rating allows the IGBT to handle large current loads, making it versatile for different power control needs.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH35C120L2C2SG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PDIP-T26

No. of Elements:

7

No. of Terminals:

26

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

485 ns

Nominal Turn On Time (ton):

240 ns

Maximum VCEsat:

2.4 V

Trade Compliance

NXH35C120L2C2SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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