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NXH35C120L2C2S1G

Onsemi

NXH35C120L2C2S1G by Onsemi

NXH35C120L2C2S1G by Onsemi is an IGBT with 6 elements, built-in diode, and thermistor in a plastic/epoxy package. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications requiring N-channel configuration and three-phase diode bridge setup.

Median Price

$46.640

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 15 parts In-Stock

1+ parts

$80.710

100+ parts

$65.720

1k+ parts

$63.220

10k+ parts

-

15

$80.710

$65.720

$63.220

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DigiKey

USA . 520 parts In-Stock

1+ parts

-

100+ parts

$49.950

1k+ parts

$49.950

10k+ parts

$49.950

520

-

$49.950

$49.950

$49.950

Flip Electronics (Authorized)

USA . 520 parts In-Stock

1+ parts

-

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-

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10k+ parts

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520

-

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-

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Future Electronics

Canada . 18 parts In-Stock

1+ parts

-

100+ parts

$35.700

1k+ parts

$35.000

10k+ parts

-

18

-

$35.700

$35.000

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Rochester

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$43.330

1k+ parts

$38.770

10k+ parts

$36.490

4

-

$43.330

$38.770

$36.490

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,014 parts In-Stock

1+ parts

$76.674

100+ parts

-

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2,014

$76.674

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-

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Vyrian

USA . 10,836 parts In-Stock

1+ parts

-

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10,836

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Flip Electronics

USA . 520 parts In-Stock

1+ parts

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-

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520

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IBS Electronics

USA . 18 parts In-Stock

1+ parts

-

100+ parts

$50.069

1k+ parts

$49.087

10k+ parts

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18

-

$50.069

$49.087

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NAC Semi

USA . 12 parts In-Stock

1+ parts

-

100+ parts

$65.820

1k+ parts

-

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12

-

$65.820

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 395 parts In-Stock

1+ parts

$35.000

100+ parts

-

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395

$35.000

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Corphita

USA . 343 parts In-Stock

1+ parts

$72.639

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343

$72.639

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QUARKTWIN TECHNOLOGY LTD

USA . 16,674 parts In-Stock

1+ parts

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16,674

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Microchip USA

USA . 10,658 parts In-Stock

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10,658

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SupplyDigital Components

Austria . 6,597 parts In-Stock

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6,597

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Kulean Microsystems

USA . 5,639 parts In-Stock

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5,639

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 4,993 parts In-Stock

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4,993

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Problanco Electronics

Mexico . 3,530 parts In-Stock

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3,530

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UHIMA Technologies

Türkiye . 672 parts In-Stock

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672

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unlock the power of efficient power control with the NXH35C120L2C2S1G by Onsemi. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor (IGBT) offers unrivaled quality and reliability for a wide range of applications. From industrial machinery to renewable energy systems, this product provides seamless performance and optimal efficiency. Say goodbye to inefficiencies and hello to maximum output with the Onsemi NXH35C120L2C2S1G - the ultimate choice for your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Enhances conductivity and efficiency for power control applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

Offers a versatile setup for various power control needs, including built-in diodes and thermistors for added functionality.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 2.4 V

Low VCEsat value indicates minimal power loss and high efficiency during operation.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into different systems or circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure connections during installation.

No. of Elements: 6

Provides a complete setup with multiple elements for enhanced performance and functionality.

Nominal Turn Off Time (toff): 485 ns

Fast turn-off time ensures quick and efficient switching capabilities.

No. of Terminals: 26

Sufficient terminals for versatile connectivity options in different circuit configurations.

Package Style (Meter): IN-LINE

Compact and space-saving design for efficient usage and installation.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating allows for handling of large voltage differences.

Transistor Element Material: SILICON

Silicon material ensures reliability and stable performance over time.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for the gate-emitter junction to prevent damage or malfunction.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures for versatile usage scenarios.

Maximum Collector Current (IC): 35 A

High collector current rating for handling large amounts of current during operation.

Maximum Gate-Emitter Threshold Voltage: 6.8 V

Suitable gate-emitter threshold voltage for optimal switching characteristics.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit connections and layout.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference in the system.

Nominal Turn On Time (ton): 240 ns

Fast turn-on time for quick response in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH35C120L2C2S1G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PDIP-T26

No. of Elements:

6

No. of Terminals:

26

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

485 ns

Nominal Turn On Time (ton):

240 ns

Maximum VCEsat:

2.4 V

Trade Compliance

NXH35C120L2C2S1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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