Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NXH40T120L3Q1PG
Onsemi
Onsemi's NXH40T120L3Q1PG is an N-CHANNEL IGBT with 1200V VCEsat, 2.2V, and 42A IC. Ideal for POWER CONTROL applications due to its 146W power dissipation, -40 to 150 °C operating temp range, and fast switching times of 83ns turn on and 305ns turn off.
ISOLATED
42 A
1200 V
COMPLEX
6.5 V
20 V
R-XUFM-X44
12
44
150 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
146 W
NO
UPPER
POWER CONTROL
SILICON
305 ns
83 ns
2.2 V
NXH40T120L3Q1SG
NXH40T120L3Q1SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 305ns toff, and 146W power dissipation. Ideal for POWER CONTROL applications, it features a max operating temperature of 150 °C and 42A IC.
NVH820S75L4SPB
NVH820S75L4SPB by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 1.55V and can handle a Max Collector Current of 820A. Ideal for POWER CONTROL applications due to its high power dissipation capability and fast turn-off time of 1354ns.
820 A
750 V
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
6.6 V
R-XUFM-X33
e3
6
33
175 Cel
1000 W
Matte Tin (Sn) - annealed
1354 ns
454 ns
1.55 V
FGD2736G3-F085V
Onsemi's FGD2736G3-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.65V, collector current of 37.5A, and operating temperature range from -40 to 175 °C. This surface-mount transistor has a package style of small outline and meets AEC-Q101 standards.
37.5 A
330 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
15000 ns
10 V
R-PSSO-G2
1
2
PLASTIC/EPOXY
SMALL OUTLINE
260
150 W
AEC-Q101
7000 ns
YES
GULL WING
SINGLE
30
AUTOMOTIVE IGNITION
30000 ns
6300 ns
11000 ns
3900 ns
1.65 V
FGD3N60LSDTM-T
FGD3N60LSDTM-T by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.5V and a max IC of 6A. Ideal for MOTOR CONTROL applications, it has a turn-off time of 1420ns and operates at temperatures ranging from -55 to 150 °C.
LOW CONDUCTION LOSS
COLLECTOR
6 A
600 V
SINGLE WITH BUILT-IN DIODE
5 V
25 V
TO-252AA
-55 Cel
40 W
MOTOR CONTROL
1420 ns
85 ns
1.5 V
FGY75T95LQDT
FGY75T95LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.69V and a max IC of 150A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
FAST SWITCHING
150 A
950 V
6.4 V
TO-247
R-PSFM-T3
3
453 W
THROUGH-HOLE
666 ns
102 ns
1.69 V
FGY75T95SQDT
FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
RC-IGBT
434 W
198.8 ns
89.6 ns
2.11 V
HGTP7N60A4-F102
HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.
34 A
7 V
TO-220AB
125 W
235 ns
205 ns
17 ns
2.7 V
ISL9V2040D3STV
ISL9V2040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a collector-emitter voltage of 390V. Ideal for automotive ignition applications, it has a built-in diode and resistor, GULL WING terminals, and can operate b/w -40 to 175 °C.
10 A
390 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
12 V
130 W
6000 ns
2780 ns
1.9 V
AFGHL50T65SQ
AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
80 A
650 V
268 W
2.1 V
FGHL50T65SQDT
FGHL50T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 100A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
100 A
159 ns
40.4 ns
AFGB30T65SQDN
AFGB30T65SQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 60A, ideal for power control applications. Featuring a single configuration with built-in diode, it has a package style of small outline and can operate b/w -55 to 175 °C. Suitable for surface mount assembly, this transistor offers fast turn-off time (toff) of 78.7ns and turn-on time (ton) of 33.6ns, meeting AEC-Q101 standards.
60 A
6 V
30 V
TO-263
220 W
MATTE TIN
78.7 ns
33.6 ns
FGAF40S65AQ
FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.
94 W
GENERAL PURPOSE SWITCHING
90.8 ns
30.3 ns
NXH160T120L2Q1SG
NXH160T120L2Q1SG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.5V, and max power dissipation of 280W. Ideal for power control applications, it has a max VCE of 1200V and max IC of 140A. Operating temp ranges from -40 to 150 °C making it suitable for various industrial uses.
140 A
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
6.9 V
R-XUFM-X30
4
280 W
2.5 V
FGH60T65SQD-F155
FGH60T65SQD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175°C and collector-emitter voltage of 650V.
120 A
TO-247AB
333 W
126.2 ns
36.8 ns
FGH40T120SQDNL4
FGH40T120SQDNL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it has a nominal turn off time of 372ns and can handle a max collector current of 160A.
160 A
R-PSFM-T4
454 W
372 ns
80 ns
1.95 V
SNXH100M95H3Q2F2PG
SNXH100M95H3Q2F2PG by Onsemi is an N-CHANNEL IGBT with 950V VCEsat, 263A IC, and 457W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Offers fast switching with rise time of 77ns and fall time of 264ns.
263 A
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
264 ns
5.7 V
R-XUFM-X40
40
457 W
77 ns
1665 ns
306 ns
2.25 V
FPF2G75FH07BP
FPF2G75FH07BP by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for POWER CONTROL applications, it has a toff of 462ns and ton of 124ns. Operating b/w -40 °C to 150°C, it offers a max VCE of 650V and Pabs of 236W in a RECTANGULAR package style.
75 A
6.8 V
R-XUFM-X32
32
236 W
462 ns
124 ns
NXH35C120L2C2S1G
NXH35C120L2C2S1G by Onsemi is an IGBT with 6 elements, built-in diode, and thermistor in a plastic/epoxy package. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications requiring N-channel configuration and three-phase diode bridge setup.
35 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-PDIP-T26
26
IN-LINE
DUAL
485 ns
240 ns
2.4 V
NXH450B100H4Q2F2PG
NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
101 A
1000 V
R-XUFM-X56
56
234 W
224 ns
42 ns
NXH450B100H4Q2F2SG
NXH450B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Max Collector-Emitter Voltage of 1000V, making it ideal for POWER CONTROL applications requiring high power dissipation up to 234W. With a Nominal Turn Off Time of 224ns, this RECTANGULAR package IGBT operates in temperatures ranging from -40 °C to 150°C.
NXH350N100H4Q2F2SG
NXH350N100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 2 banks, series connected, and built-in diode. It has a max VCEsat of 1.8V and can handle a collector-emitter voltage of 1000V. Ideal for power control applications due to its high power dissipation capability of 592W.
329 A
2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X42
42
125 Cel
592 W
572.5 ns
114 ns
1.8 V
NXH200T120H3Q2F2SG
NXH200T120H3Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat and 256A IC. Ideal for POWER CONTROL applications, it has a tr of 102ns, tf of 99ns, and toff of 1096ns. This COMPLEX transistor operates b/w -40 °C to 150°C with a max power dissipation of 679W in a RECTANGULAR package style.
256 A
99 ns
679 W
1096 ns
373 ns
2.3 V
NXH35C120L2C2ESG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Body Material: UNSPECIFIED; Nominal Turn Off Time (toff): 485 ns;
R-XDIP-T26
NXH50C120L2C2ESG
NXH50C120L2C2ESG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 616ns toff. Ideal for power control applications requiring a BRIDGE configuration with built-in diode and thermistor. Package: PLASTIC/EPOXY, Terminals: THROUGH-HOLE, Temp Range: -40°C to 150°C.
50 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR
7
616 ns
248 ns
NCG225L75NF8M1
NCG225L75NF8M1 by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 1.75V, Nominal Turn Off Time of 424ns, and Max Collector-Emitter Voltage of 750V. This SQUARE-shaped chip operates b/w -40 to 175 °C with a Gate-Emitter Threshold Voltage of 7.2V, making it suitable for high-power motor control systems.
7.2 V
S-XUUC-N2
SQUARE
UNCASED CHIP
NO LEAD
424 ns
468 ns
1.75 V
NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 100A. Ideal for POWER CONTROL applications, it has a toff of 412ns and ton of 93ns. Operating temperature ranges from -40 °C to 175°C making it suitable for high-power systems.
R-XUFM-X20
20
328 W
412 ns
93 ns
NXH25C120L2C2SG
NXH25C120L2C2SG by Onsemi is an IGBT transistor with 1200V VCEsat, 25A IC, and 320ns toff. Ideal for motor control applications due to its N-CHANNEL polarity and BRIDGE configuration with built-in diode. Operates in temperatures from -40 °C to 150°C, making it suitable for various industrial settings.
25 A
320 ns
128 ns
SNXH75M65L3F2STG
SNXH75M65L3F2STG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 75A IC, and 236W power dissipation. Ideal for general purpose switching applications due to its built-in diode and thermistor. Features include a fast turn-off time of 432ns and a max operating temperature of 150 °C.
LOW SWITCHING LOSSES
R-PUFM-P32
PIN/PEG
432 ns
129 ns
FGH75T65UPD-F155
FGH75T65UPD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max IC of 150A. Ideal for POWER CONTROL applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -55 to 175 °C.
33 ns
7.5 V
375 W
56 ns
249 ns
197 ns
98 ns
87 ns
AFGY160T65SPD-B4
AFGY160T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max IC of 240A. Ideal for power control applications, it has a max operating temperature of 175 °C and a collector-emitter voltage of 650V.
240 A
6.3 V
882 W
2.05 V
NXH450N65L4Q2F2SG
NXH450N65L4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 280A IC, and 633W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Operating temperature ranges from -40 °C to 125°C making it suitable for various industrial uses.
280 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
5.2 V
633 W
978 ns
192 ns
NXH450N65L4Q2F2PG
NXH450N65L4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can handle a collector current of up to 280A. Ideal for power control applications due to its high power dissipation capability of 633W and operating temperature range from -40 °C to 125°C.
R-XUFM-X36
36
NXH50M65L4Q1SG
NXH50M65L4Q1SG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 48A IC, and 86W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 130ns and a gate-emitter voltage of 20V. Suitable for high-power systems requiring efficient switching capabilities.
48 A
R-XUFM-X27
27
86 W
130 ns
39 ns
2.22 V
AFGY120T65SPD-B4
AFGY120T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 1.85V and Max Collector-Emitter Voltage of 650V. Ideal for POWER CONTROL applications, it has a Nominal Turn Off Time of 247ns and can handle up to 240A of Max Collector Current (IC).
6.2 V
247 ns
183 ns
1.85 V
NXH300B100H4Q2F2SG
NXH300B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns, ton of 110.42ns, and can handle up to 194W power dissipation.
73 A
5.9 V
R-XUFM-X59
59
194 W
326 ns
110.42 ns
NXH300B100H4Q2F2PG
NXH300B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns and ton of 110.42ns. Operating temperature ranges from -40 °C to 175°C, making it suitable for high-power systems.
AFGHL40T65RQDN
AFGHL40T65RQDN by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.82V and a collector-emitter voltage of 650V. It is designed for power control applications, featuring a single configuration with built-in diode and a max power dissipation of 288W.
46 A
6.05 V
288 W
149 ns
74 ns
1.82 V
NXH75M65L4Q1PTG
NXH75M65L4Q1PTG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 59A IC, and 83W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 146ns and operates b/w -40 to 150 °C.
59 A
83 W
146 ns
72 ns
NXH75M65L4Q1SG
NXH75M65L4Q1SG by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.22V, it offers a Max Collector-Emitter Voltage of 650V and Max Power Dissipation of 83W. Ideal for high-power systems requiring fast switching capabilities with Nominal Turn Off Time of 146ns and Nominal Turn On Time of 72ns.
FGHL75T65LQDTL4
FGHL75T65LQDTL4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.35V and a max IC of 80A. It is designed for power control applications, featuring a single configuration with built-in diode and a package style of flange mount.
469 W
660 ns
60 ns
1.35 V
© 2023 All rights reserved
