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NXH75M65L4Q1SG

Onsemi

NXH75M65L4Q1SG by Onsemi

NXH75M65L4Q1SG by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.22V, it offers a Max Collector-Emitter Voltage of 650V and Max Power Dissipation of 83W. Ideal for high-power systems requiring fast switching capabilities with Nominal Turn Off Time of 146ns and Nominal Turn On Time of 72ns.

Median Price

$59.750

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 21 parts In-Stock

1+ parts

$67.770

100+ parts

$51.719

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21

$67.770

$51.719

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Rochester

USA . 11 parts In-Stock

1+ parts

-

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$51.730

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$46.280

10k+ parts

$43.560

11

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$51.730

$46.280

$43.560

Distributors (In-Stock)

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Digiode

USA . 864 parts In-Stock

1+ parts

$63.479

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864

$63.479

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Vyrian

USA . 3,670 parts In-Stock

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3,670

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Distributors (Availability)

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Corphita

USA . 805 parts In-Stock

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$60.138

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805

$60.138

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Corohmni

South Africa . 132 parts In-Stock

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$66.820

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132

$66.820

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Microchip USA

USA . 6,794 parts In-Stock

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$182.873

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6,794

$182.873

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SupplyDigital Components

Austria . 6,754 parts In-Stock

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TANS Electronics

Latvia . 5,072 parts In-Stock

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5,072

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Kulean Microsystems

USA . 3,138 parts In-Stock

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3,138

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Problanco Electronics

Mexico . 17 parts In-Stock

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Overview

Unlock the power of innovation with the NXH75M65L4Q1SG by Onsemi, a cutting-edge Insulated Gate Bipolar Transistor designed to revolutionize power control applications. With its N-CHANNEL polarity and complex configuration, this transistor offers unparalleled performance and efficiency. Experience seamless operation and maximum power dissipation of 83W, all while maintaining a nominal turn-off time of 146ns. Trust in Onsemi's reputation for quality and reliability, as this product is engineered to excel in a variety of industrial settings. Elevate your projects with the NXH75M65L4Q1SG and witness the difference in performance and value it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high current-carrying capability and efficiency, making them ideal for power control applications.

Configuration: COMPLEX

Complex configuration offers improved performance and efficiency in power control applications.

Maximum VCEsat: 2.22 V

Low VCEsat value indicates low power dissipation and high efficiency in power control applications.

No. of Elements: 6

Having 6 elements allows for more complex power control applications and precise control.

Maximum Power Dissipation (Abs): 83 W

High power dissipation rating allows for handling large amounts of power in various applications.

Maximum Operating Temperature: 150 °C

High operating temperature ensures reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating enables handling high voltage levels in power control applications.

Maximum Collector Current (IC): 59 A

High collector current rating allows for handling high currents in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH75M65L4Q1SG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X27

No. of Elements:

6

No. of Terminals:

27

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

146 ns

Nominal Turn On Time (ton):

72 ns

Maximum VCEsat:

2.22 V

Trade Compliance

NXH75M65L4Q1SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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