Loading...

NXH75M65L4Q1PTG

Onsemi

NXH75M65L4Q1PTG by Onsemi

NXH75M65L4Q1PTG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 59A IC, and 83W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 146ns and operates b/w -40 to 150 °C.

Median Price

$49.982

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 21 parts In-Stock

1+ parts

$65.550

100+ parts

$49.670

1k+ parts

-

10k+ parts

-

21

$65.550

$49.670

-

-

Verical

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

$49.982

1k+ parts

-

10k+ parts

-

1,512

-

$49.982

-

-

Rochester

USA . 168 parts In-Stock

1+ parts

-

100+ parts

$49.680

1k+ parts

$44.450

10k+ parts

$41.830

168

-

$49.680

$44.450

$41.830

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,851 parts In-Stock

1+ parts

$54.112

100+ parts

-

1k+ parts

-

10k+ parts

-

1,851

$54.112

-

-

-

Vyrian

USA . 5,274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,274

-

-

-

-

Flip Electronics

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,167 parts In-Stock

1+ parts

$51.264

100+ parts

-

1k+ parts

-

10k+ parts

-

2,167

$51.264

-

-

-

Corohmni

South Africa . 311 parts In-Stock

1+ parts

$56.960

100+ parts

-

1k+ parts

-

10k+ parts

-

311

$56.960

-

-

-

Microchip USA

USA . 6,933 parts In-Stock

1+ parts

$180.196

100+ parts

-

1k+ parts

-

10k+ parts

-

6,933

$180.196

-

-

-

Problanco Electronics

Mexico . 6,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,651

-

-

-

-

TANS Electronics

Latvia . 2,794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,794

-

-

-

-

SupplyDigital Components

Austria . 1,585 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,585

-

-

-

-

Kulean Microsystems

USA . 1,372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,372

-

-

-

-

UHIMA Technologies

Türkiye . 719 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

719

-

-

-

-

Overview

Experience the power and reliability of Onsemi's NXH75M65L4Q1PTG Insulated Gate Bipolar Transistor. With its N-CHANNEL polarity, complex configuration, and high-quality silicon material, this IGBT is perfect for power control applications. Boasting a maximum VCEsat of 2.22V and a maximum collector-emitter voltage of 650V, this transistor offers exceptional performance and efficiency. Trust Onsemi's reputation for excellence and choose the NXH75M65L4Q1PTG for your next project, where quality meets value.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drops and faster switching speeds compared to P-channel IGBTs, making them suitable for high-power applications.

Configuration: COMPLEX

Complex configuration allows for more precise control over power distribution and switching, making this IGBT suitable for intricate power control applications.

Maximum VCEsat: 2.22 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction when conducting, leading to higher efficiency and less power dissipation in the device.

Nominal Turn Off Time (toff): 146 ns

Fast turn-off time ensures quick switching transitions, reducing switching losses and enhancing overall performance of power control applications.

Maximum Power Dissipation (Abs): 83 W

High maximum power dissipation rating allows for reliable operation under high power conditions without the risk of overheating or damaging the device.

Maximum Collector-Emitter Voltage: 650 V

High maximum collector-emitter voltage rating enables this IGBT to handle high voltage levels in power control applications without breakdown.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH75M65L4Q1PTG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X27

JESD-609 Code:

e3

No. of Elements:

6

No. of Terminals:

27

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

146 ns

Nominal Turn On Time (ton):

72 ns

Maximum VCEsat:

2.22 V

Trade Compliance

NXH75M65L4Q1PTG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1