Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
SNXH100M95H3Q2F2PG by Onsemi is an N-CHANNEL IGBT with 950V VCEsat, 263A IC, and 457W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Offers fast switching with rise time of 77ns and fall time of 264ns.
Median Price
-
Lifecycle Status
Suppliers In-Stock
2
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
AZTECH Wire
$12.280
Kulean Microsystems
TANS Electronics
Problanco Electronics
SupplyDigital Components
Corphita
Corohmni
UHIMA Technologies
N-CHANNEL polarity provides efficient power control and high performance.
This configuration offers enhanced functionality and protection features for power control applications.
Specifically designed for power control applications, ensuring reliable operation.
Fast rise time allows for quick switching and response times in power control scenarios.
Low VCEsat rating indicates minimal power loss and high efficiency during operation.
Rectangular package shape offers ease of mounting and installation in various systems.
Having 6 elements provides increased power handling capacity and redundancy.
Fast fall time ensures quick turn-off of the transistor, crucial for power control applications.
Balanced turn-off time allows for controlled switching and operation.
Having 40 terminals provides connectivity options and flexibility in system integration.
High power dissipation rating indicates capability to handle heavy loads and sustained operation.
Flange mount package style offers secure and durable mounting options for industrial applications.
High temperature rating ensures reliable operation in harsh environments.
High VCE rating allows for handling of high voltage applications with ease.
Silicon material provides good switching performance and reliability for the transistor.
Adequate gate-emitter voltage rating ensures proper gate control for efficient switching.
Low temperature threshold allows for operation in cold environments without compromising performance.
High collector current rating enables handling of heavy current loads with ease.
Optimal gate-emitter threshold voltage allows for precise control and switching performance.
Upper terminal position simplifies connection and maintenance of the transistor in systems.
Isolated case connection provides safety and prevents electrical interference in the system.
Fast turn-on time ensures quick activation of the transistor for power control operations.
Insulated Gate Bipolar Transistors (IGBT) SNXH100M95H3Q2F2PG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Rise Time (tr):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
Maximum VCEsat:
SNXH100M95H3Q2F2PG Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 09/Oct/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
KSZ9031RNXIC
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
BAV99
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
DS18B20
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
SS14
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
1N4148WT
Jiangsu Changjiang Electronics Technology
LM358ADR
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
BAV99WT1G
Onsemi
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
APT85GR120B2
Microchip Technology
Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.
IRG4BC40KPBF
Infineon Technologies
IRG4BC40KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 42A max collector current. It has a single configuration for MOTOR CONTROL applications, offering a max power dissipation of 160W. The transistor features a package style of FLANGE MOUNT and can operate at temperatures up to 150°C.
IKP08N65H5XKSA1
IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
HGTG18N120BND
HGTG18N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, suitable for motor control applications. It features a 22ns rise time, 200ns fall time, and 345ns turn off time. The transistor has a max power dissipation of 390W and can handle a collector current of up to 54A.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;
FF450R12ME4B11BPSA2
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IXXX200N60B3
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;
FS150R12KT3
Eupec & Kg
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
MIXA30W1200TED
Littelfuse
The Littelfuse MIXA30W1200TED is an N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications, it has a max VCEsat of 2.1V and can handle up to 43A collector current. With a package style of flange mount and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
IRG4PC50FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
APT70GR120J
Microchip Technology's APT70GR120J is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 112A max collector current. Ideal for motor control applications, it features a built-in diode, 394ns turn-off time, and 543W power dissipation capability.
V23990-K230-F40-/1A/-PM
Vincotech
Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.
SKM400GB125D
Semikron International
Semikron International's SKM400GB125D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 3.85V and Max IC of 400A, it operates at up to 150°C with a VCE of 1200V. This RECTANGULAR package has 7 terminals and meets IEC-60747-1 & UL standards.
IXLF19N250A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
ISL9V5036P3_F085
Fairchild Semiconductor
Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
FGH40N60UFTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FGH60N60SMD
FGH60N60SMD by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage. It has a power dissipation of 600W and rise time of 70ns, making it ideal for power control applications. The transistor features a built-in diode, operates at up to 175°C, and has a turn-off time of 163ns.
IXYN82N120C3H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;
HGTG20N60B3D
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 200 ns;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
SNXH100M65L3Q2F2PG
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 339 W; Maximum Collector Current (IC): 263 A; Maximum Operating Temperature: 150 Cel;
SNXH100M65L4Q2F2P2G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 339 W; Maximum Collector Current (IC): 263 A; No. of Elements: 8;
SNXH100M65L4Q2F2P2G-N1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 339 W; Maximum Collector Current (IC): 263 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
SNXH150B120H3Q2F2PG-N
N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 279 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
SNXH150B120H3Q2F2PG-R
N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 279 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-XUFM-X35;
SNXH160B120L2Q0PG
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
SNXH160B120L2Q0PG-N
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 359 ns;
SNXH600B100H4Q2F2S1G-S
Insulated Gate Bipolar Transistors;
SNXH75M65L3F2STG
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 236 W; Maximum Collector Current (IC): 75 A; Terminal Form: PIN/PEG;
SNXH80T120L2Q0P2G
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Package Style (Meter): FLANGE MOUNT;
SNXH80T120L2Q0SG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Transistor Application: POWER CONTROL;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved