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AFGY120T65SPD-B4

Onsemi

AFGY120T65SPD-B4 by Onsemi

AFGY120T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 1.85V and Max Collector-Emitter Voltage of 650V. Ideal for POWER CONTROL applications, it has a Nominal Turn Off Time of 247ns and can handle up to 240A of Max Collector Current (IC).

Median Price

$6.644

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 730 parts In-Stock

1+ parts

-

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$5.500

1k+ parts

$4.920

10k+ parts

$4.630

730

-

$5.500

$4.920

$4.630

Verical

USA . 730 parts In-Stock

1+ parts

-

100+ parts

$7.787

1k+ parts

$6.975

10k+ parts

$6.563

730

-

$7.787

$6.975

$6.563

Flip Electronics (Authorized)

USA . 270 parts In-Stock

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270

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Digiode

USA . 277 parts In-Stock

1+ parts

$6.593

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277

$6.593

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Vyrian

USA . 12,882 parts In-Stock

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IBS Electronics

USA . 450 parts In-Stock

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$9.551

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450

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$9.551

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Flip Electronics

USA . 270 parts In-Stock

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270

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Distributors (Availability)

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Native Components

USA . 405 parts In-Stock

1+ parts

$1.080

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405

$1.080

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Northwest PG Solutions

USA . 70 parts In-Stock

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$1.188

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70

$1.188

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Corphita

USA . 1,171 parts In-Stock

1+ parts

$6.246

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$6.246

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Corohmni

South Africa . 180 parts In-Stock

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$6.940

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180

$6.940

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AZTECH Wire

Italy . 559 parts In-Stock

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$9.930

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559

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SupplyDigital Components

Austria . 5,332 parts In-Stock

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Kepictronics

USA . 5,202 parts In-Stock

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Problanco Electronics

Mexico . 4,213 parts In-Stock

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Kulean Microsystems

USA . 3,095 parts In-Stock

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TANS Electronics

Latvia . 2,687 parts In-Stock

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UHIMA Technologies

Türkiye . 179 parts In-Stock

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Perfect Parts

USA . 134 parts In-Stock

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Overview

Unleash the power of innovation with the AFGY120T65SPD-B4 by Onsemi. As a leader in insulated gate bipolar transistors, Onsemi delivers top-quality products for power control applications. With a maximum collector-emitter voltage of 650V and a maximum operating temperature of 175 °C, this single-channel transistor offers unparalleled performance. Whether you're looking to optimize power efficiency or enhance system reliability, the AFGY120T65SPD-B4 is the ideal solution. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the IGBT suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and low conduction losses, making it ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, reducing component count and overall complexity.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability.

Maximum VCEsat: 1.85 V

Low saturation voltage results in minimal power loss and efficient operation of the IGBT.

Package Shape: RECTANGULAR

Allows for easy mounting and installation onto circuit boards or heat sinks.

Terminal Form: THROUGH-HOLE

Facilitates secure and reliable connections to external circuits or components.

Nominal Turn Off Time (toff): 247 ns

Fast turn-off time improves switching performance and helps in reducing heat dissipation.

Maximum Power Dissipation (Abs): 882 W

Capable of handling high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and heat dissipation, enhancing the overall performance of the IGBT.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance, suitable for industrial environments.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltage levels, making it suitable for power control applications with varying voltage requirements.

Transistor Element Material: SILICON

Provides reliability and stability, ensuring long-term performance of the IGBT.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control of the IGBT, ensuring accurate switching and safe operation.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme cold conditions, making it versatile for a wide range of applications.

Maximum Collector Current (IC): 240 A

High current handling capability, suitable for power control applications requiring high current levels.

Maximum Gate-Emitter Threshold Voltage: 6.2 V

Provides the required threshold for turning on the IGBT, ensuring reliable and stable operation.

Terminal Position: SINGLE

Simplifies connection and installation, ensuring easy integration into existing circuits.

Nominal Turn On Time (ton): 183 ns

Fast turn-on time enables quick switching and efficient operation of the IGBT.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high quality and reliability for automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AFGY120T65SPD-B4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.2 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

247 ns

Nominal Turn On Time (ton):

183 ns

Maximum VCEsat:

1.85 V

Trade Compliance

AFGY120T65SPD-B4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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