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NCG225L75NF8M1

Onsemi

NCG225L75NF8M1 by Onsemi

NCG225L75NF8M1 by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 1.75V, Nominal Turn Off Time of 424ns, and Max Collector-Emitter Voltage of 750V. This SQUARE-shaped chip operates b/w -40 to 175 °C with a Gate-Emitter Threshold Voltage of 7.2V, making it suitable for high-power motor control systems.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 351 parts In-Stock

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TANS Electronics

Latvia . 6,831 parts In-Stock

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Kulean Microsystems

USA . 6,636 parts In-Stock

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SupplyDigital Components

Austria . 2,792 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 723 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Discover the power of the NCG225L75NF8M1 by Onsemi, a top-tier Insulated Gate Bipolar Transistor designed for motor control applications. With its N-CHANNEL configuration and fast turn on/off times, this product delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this IGBT guarantees quality and consistency. Say goodbye to worries about overheating or voltage spikes, as the NCG225L75NF8M1 boasts a maximum VCEsat of 1.75V and can handle up to 750V. Trust in Onsemi's expertise and invest in cutting-edge technology for your next project with the NCG225L75NF8M1.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for motor control applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to control the IGBT for motor control purposes.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability in such systems.

Maximum VCEsat: 1.75 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and reduced power losses.

Nominal Turn Off Time (toff): 424 ns

Fast turn-off time helps in minimizing switching losses and improving the overall performance of the IGBT in motor control applications.

Maximum Collector-Emitter Voltage: 750 V

High maximum voltage rating allows the IGBT to handle high power levels in motor control circuits without the risk of breakdown.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliable performance even in harsh industrial environments where temperature variations are common.

Maximum Gate-Emitter Voltage: 20 V

Sufficient gate-emitter voltage rating for proper turn-on and turn-off of the IGBT in motor control applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions, making the IGBT suitable for a diverse range of motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NCG225L75NF8M1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

750 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

S-XUUC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

424 ns

Nominal Turn On Time (ton):

468 ns

Maximum VCEsat:

1.75 V

Trade Compliance

NCG225L75NF8M1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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