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NVH820S75L4SPB

Onsemi

NVH820S75L4SPB by Onsemi

NVH820S75L4SPB by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 1.55V and can handle a Max Collector Current of 820A. Ideal for POWER CONTROL applications due to its high power dissipation capability and fast turn-off time of 1354ns.

Median Price

$607.980

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,756 parts In-Stock

1+ parts

$324.750

100+ parts

$305.260

1k+ parts

$285.780

10k+ parts

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6,756

$324.750

$305.260

$285.780

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Mouser Electronics

USA . 4 parts In-Stock

1+ parts

$607.980

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$585.140

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4

$607.980

$585.140

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DigiKey

USA . 4 parts In-Stock

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$653.960

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4

$653.960

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Distributors (In-Stock)

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Digiode

USA . 818 parts In-Stock

1+ parts

$359.110

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818

$359.110

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Vyrian

USA . 2,194 parts In-Stock

1+ parts

$378.010

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2,194

$378.010

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Flip Electronics

USA . 52 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,247 parts In-Stock

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$340.209

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$340.209

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Corohmni

South Africa . 472 parts In-Stock

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$378.010

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472

$378.010

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Microchip USA

USA . 6,864 parts In-Stock

1+ parts

$714.483

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6,864

$714.483

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Problanco Electronics

Mexico . 3,844 parts In-Stock

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Kulean Microsystems

USA . 3,488 parts In-Stock

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SupplyDigital Components

Austria . 3,298 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,609 parts In-Stock

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2,609

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UHIMA Technologies

Türkiye . 817 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of the Onsemi NVH820S75L4SPB, a game-changing Insulated Gate Bipolar Transistor designed for optimal performance in power control applications. With a maximum collector current of 820A and a collector-emitter voltage of 750V, this N-CHANNEL transistor offers unparalleled reliability and efficiency. Featuring 3 banks, series connected with a built-in diode and thermistor, this product guarantees seamless operation even in the most demanding conditions. Trust Onsemi's reputation for quality and innovation and experience the difference with the NVH820S75L4SPB.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for better voltage control and protection features, ensuring the stability and reliability of the power control system.

Maximum VCEsat: 1.55 V

Low VCEsat means lower power dissipation and higher efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular package shapes are easy to handle and mount, making the product more user-friendly.

Nominal Turn Off Time (toff): 1354 ns

Fast turn-off time ensures efficient switching and reduces power losses in the system.

Maximum Power Dissipation (Abs): 1000 W

High power dissipation capability allows the IGBT to handle large amounts of power without overheating.

Maximum Operating Temperature: 175 °C

High operating temperature range allows the IGBT to operate in demanding environments without performance degradation.

Maximum Collector-Emitter Voltage: 750 V

High collector-emitter voltage rating provides the IGBT with the ability to control high voltage levels in power systems.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures reliable and stable operation of the IGBT during switching transitions.

Maximum Collector Current (IC): 820 A

High collector current rating allows the IGBT to handle large current loads in power control applications.

Maximum Gate-Emitter Threshold Voltage: 6.6 V

Gate-emitter threshold voltage determines the turn-on and turn-off characteristics of the IGBT, ensuring precise control of power flow.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good electrical conductivity and corrosion resistance, enhancing the overall reliability of the product.

Terminal Position: UPPER

Terminal position in the upper section of the IGBT allows for easy connectivity and integration into power control systems.

Case Connection: ISOLATED

Isolated case connection helps in better thermal management and electrical insulation, improving the overall safety and reliability of the product.

Nominal Turn On Time (ton): 454 ns

Fast turn-on time helps in achieving quick response and high efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NVH820S75L4SPB attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Maximum Gate-Emitter Threshold Voltage:

6.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X33

JESD-609 Code:

e3

No. of Elements:

6

No. of Terminals:

33

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1354 ns

Nominal Turn On Time (ton):

454 ns

Maximum VCEsat:

1.55 V

Trade Compliance

NVH820S75L4SPB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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