Loading...

FGY75T95SQDT

Onsemi

FGY75T95SQDT by Onsemi

FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

Median Price

$4.990

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 364 parts In-Stock

1+ parts

-

100+ parts

$4.990

1k+ parts

$4.460

10k+ parts

$4.200

364

-

$4.990

$4.460

$4.200

Flip Electronics (Authorized)

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,150 parts In-Stock

1+ parts

$5.282

100+ parts

-

1k+ parts

-

10k+ parts

-

1,150

$5.282

-

-

-

Vyrian

USA . 2,877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,877

-

-

-

-

Bristol Electronics

USA . 390 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

390

-

-

-

-

Dan-Mar Components

USA . 390 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

390

-

-

-

-

Nova Conductors

Japan . 21 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21

-

-

-

-

Flip Electronics

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 13,548 parts In-Stock

1+ parts

$0.391

100+ parts

$0.391

1k+ parts

$0.391

10k+ parts

-

13,548

$0.391

$0.391

$0.391

-

Ampacity Inc.

Singapore . 140 parts In-Stock

1+ parts

$4.730

100+ parts

-

1k+ parts

-

10k+ parts

-

140

$4.730

-

-

-

Corphita

USA . 1,044 parts In-Stock

1+ parts

$5.004

100+ parts

-

1k+ parts

-

10k+ parts

-

1,044

$5.004

-

-

-

Corohmni

South Africa . 435 parts In-Stock

1+ parts

$5.560

100+ parts

-

1k+ parts

-

10k+ parts

-

435

$5.560

-

-

-

AZTECH Wire

Italy . 334 parts In-Stock

1+ parts

$11.600

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$11.600

-

-

-

Microchip USA

USA . 103 parts In-Stock

1+ parts

$26.656

100+ parts

-

1k+ parts

-

10k+ parts

-

103

$26.656

-

-

-

Kulean Microsystems

USA . 8,014 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,014

-

-

-

-

Argo Parts USA

USA . 5,374 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,374

-

-

-

-

SupplyDigital Components

Austria . 4,157 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,157

-

-

-

-

Lixinc

USA . 3,071 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,071

-

-

-

-

Continental Prestige Electronics

USA . 2,095 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,095

-

-

-

-

TANS Electronics

Latvia . 2,022 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,022

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Problanco Electronics

Mexico . 947 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

947

-

-

-

-

UHIMA Technologies

Türkiye . 198 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

198

-

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Discover the power of reliable performance with the FGY75T95SQDT by Onsemi. As a leading manufacturer in the industry, Onsemi's Insulated Gate Bipolar Transistors (IGBT) are designed to deliver superior power control for a variety of applications. With a maximum VCEsat of 2.11V and a maximum collector current of 150A, this single-channel transistor offers unparalleled efficiency and functionality. Whether you're looking to enhance your industrial processes or optimize your renewable energy systems, the FGY75T95SQDT provides the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good insulation and protection for the components inside, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are commonly used in high-power applications due to their lower on-state resistance and better efficiency.

Maximum VCEsat: 2.11 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in lower power dissipation and improved efficiency.

Maximum Power Dissipation (Abs): 434 W

High power dissipation capability allows the IGBT to handle large currents and power levels without overheating.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in elevated temperature environments.

Maximum Collector-Emitter Voltage: 950 V

The high voltage rating makes this IGBT suitable for high-power applications that require a large voltage handling capacity.

Maximum Collector Current (IC): 150 A

High collector current rating allows the IGBT to handle large current flows, making it ideal for high-power applications.

Nominal Turn On Time (ton): 89.6 ns

Fast turn-on time enables quick switching speeds, crucial for power control applications that require rapid response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGY75T95SQDT attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

950 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

198.8 ns

Nominal Turn On Time (ton):

89.6 ns

Maximum VCEsat:

2.11 V

Trade Compliance

FGY75T95SQDT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5