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FGY75T95LQDT

Onsemi

FGY75T95LQDT by Onsemi

FGY75T95LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.69V and a max IC of 150A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.

Median Price

$8.620

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 233 parts In-Stock

1+ parts

$10.050

100+ parts

$7.180

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$7.180

10k+ parts

$5.690

233

$10.050

$7.180

$7.180

$5.690

DigiKey

USA . 187 parts In-Stock

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-

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$7.190

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$7.190

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$7.190

187

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$7.190

$7.190

$7.190

Flip Electronics (Authorized)

USA . 187 parts In-Stock

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187

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Digiode

USA . 210 parts In-Stock

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$9.548

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210

$9.548

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Vyrian

USA . 8,626 parts In-Stock

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Flip Electronics

USA . 187 parts In-Stock

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187

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Distributors (Availability)

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Ampacity Inc.

Singapore . 147 parts In-Stock

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$6.110

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147

$6.110

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Corohmni

South Africa . 440 parts In-Stock

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$7.190

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$7.190

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Corphita

USA . 1,872 parts In-Stock

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$9.045

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1,872

$9.045

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Microchip USA

USA . 145 parts In-Stock

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$27.860

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$27.860

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Problanco Electronics

Mexico . 8,353 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,148 parts In-Stock

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Kulean Microsystems

USA . 3,573 parts In-Stock

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TANS Electronics

Latvia . 2,602 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 1,628 parts In-Stock

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Perfect Parts

USA . 1,445 parts In-Stock

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Northwest PG Solutions

USA . 1,054 parts In-Stock

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Native Components

USA . 771 parts In-Stock

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771

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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Component Stockers USA

USA . 7 parts In-Stock

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Overview

Upgrade your power control systems with the FGY75T95LQDT Insulated Gate Bipolar Transistor (IGBT) from Onsemi. This high-quality N-channel transistor offers a maximum VCEsat of 1.69V and a maximum collector-emitter voltage of 950V, making it perfect for a wide range of applications. With a nominal turn-off time of 666ns and a maximum collector current of 150A, this single configuration IGBT provides efficient power management while ensuring reliable performance. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-notch products that meet your power control needs. Experience the value and benefits of the FGY75T95LQDT today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation for safety and protection against electrical shocks.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and control for power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode for reverse current protection.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliability and performance.

Maximum VCEsat: 1.69 V

Low saturation voltage helps minimize power loss and improve efficiency.

Package Shape: RECTANGULAR

Allows for easy installation and mounting in various devices and systems.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections in circuit boards.

Nominal Turn Off Time (toff): 666 ns

Fast turn-off time ensures quick response and control in power applications.

No. of Terminals: 3

Simple and straightforward connections for ease of use in circuits.

Maximum Power Dissipation (Abs): 453 W

High power dissipation capability for handling heavy loads and power levels.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and installation in various systems and equipment.

Maximum Operating Temperature: 175 °C

Wide operating temperature range for versatility and reliability in various environments.

Maximum Collector-Emitter Voltage: 950 V

High voltage rating for handling demanding power applications.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability in power electronics.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for the gate-emitter to prevent damage or malfunction.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures operation in extreme cold conditions.

Maximum Collector Current (IC): 150 A

High current rating for handling large power loads and applications.

Maximum Gate-Emitter Threshold Voltage: 6.4 V

Optimal threshold voltage for efficient switching and control.

Terminal Position: SINGLE

Simplified terminal configuration for easy installation and connection.

Nominal Turn On Time (ton): 102 ns

Fast turn-on time for quick response and control in power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGY75T95LQDT attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

950 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

666 ns

Nominal Turn On Time (ton):

102 ns

Maximum VCEsat:

1.69 V

Trade Compliance

FGY75T95LQDT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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