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NXH450N65L4Q2F2PG

Onsemi

NXH450N65L4Q2F2PG by Onsemi

NXH450N65L4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can handle a collector current of up to 280A. Ideal for power control applications due to its high power dissipation capability of 633W and operating temperature range from -40 °C to 125°C.

Median Price

$113.955

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 36 parts In-Stock

1+ parts

$122.330

100+ parts

$109.107

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36

$122.330

$109.107

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Rochester

USA . 6 parts In-Stock

1+ parts

-

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$105.580

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$94.470

10k+ parts

$88.910

6

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$105.580

$94.470

$88.910

Distributors (In-Stock)

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Digiode

USA . 1,449 parts In-Stock

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$111.720

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1,449

$111.720

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Vyrian

USA . 2,100 parts In-Stock

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2,100

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Distributors (Availability)

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Corphita

USA . 642 parts In-Stock

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$105.840

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642

$105.840

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Corohmni

South Africa . 376 parts In-Stock

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$117.600

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376

$117.600

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SupplyDigital Components

Austria . 7,612 parts In-Stock

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7,612

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Kulean Microsystems

USA . 7,139 parts In-Stock

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7,139

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TANS Electronics

Latvia . 5,132 parts In-Stock

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Problanco Electronics

Mexico . 3,745 parts In-Stock

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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Overview

Unleash the power of innovation with the NXH450N65L4Q2F2PG from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT) like no other. This N-CHANNEL transistor is designed for power control applications, offering a maximum VCEsat of 2.2V and a maximum collector-emitter voltage of 650V. With its series connected, center tap configuration, this transistor boasts enhanced performance and efficiency. Experience the value of superior technology with the NXH450N65L4Q2F2PG by Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making this product a good choice for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for efficient power control and protection with the built-in diode and thermistor, making the product versatile and reliable.

Maximum VCEsat: 2.2 V

The low VCEsat value indicates minimal voltage drop when the transistor is conducting, leading to high efficiency in power control applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various electronic systems.

Nominal Turn Off Time (toff): 978 ns

The fast turn-off time ensures efficient switching and control of power flow, making the product suitable for high-frequency applications.

Maximum Power Dissipation (Abs): 633 W

The high power dissipation capability allows the product to handle large amounts of power without overheating, ensuring reliable operation.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to withstand harsh environmental conditions and maintain performance under heat.

Maximum Collector-Emitter Voltage: 650 V

The high collector-emitter voltage rating makes the product suitable for high-voltage power control applications.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating allows for precise control of the transistor's switching behavior, ensuring reliable operation.

Maximum Collector Current (IC): 280 A

The high collector current rating allows the product to handle high current loads, making it suitable for power control in heavy-duty applications.

Nominal Turn On Time (ton): 192 ns

The fast turn-on time enables quick response in switching the transistor on, ensuring efficient power control and performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH450N65L4Q2F2PG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

5.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X36

No. of Elements:

2

No. of Terminals:

36

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

978 ns

Nominal Turn On Time (ton):

192 ns

Maximum VCEsat:

2.2 V

Trade Compliance

NXH450N65L4Q2F2PG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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