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NXH40T120L2Q1SG

Onsemi

NXH40T120L2Q1SG by Onsemi

NXH40T120L2Q1SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 40A IC, and 20V gate-emitter voltage. Ideal for power control applications due to its complex configuration and silicon material. Operates b/w -40 °C to 150°C temperature range in a flange mount package style.

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1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 6,627 parts In-Stock

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SupplyDigital Components

Austria . 6,302 parts In-Stock

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Kulean Microsystems

USA . 3,365 parts In-Stock

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Corphita

USA . 1,206 parts In-Stock

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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Problanco Electronics

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Corohmni

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Overview

Discover the NXH40T120L2Q1SG by Onsemi, an Insulated Gate Bipolar Transistor that exceeds expectations in power control applications. With a maximum VCEsat of 2.1V and a maximum collector-emitter voltage of 1200V, this N-CHANNEL transistor offers unmatched performance and reliability. Onsemi's commitment to quality shines through in this product, providing customers with a robust and efficient solution for their power control needs. Elevate your projects with the NXH40T120L2Q1SG and experience the superior value and benefits it brings to your applications.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have lower conduction losses compared to P-CHANNEL, making them more efficient for power control applications.

Configuration: COMPLEX

COMPLEX configuration offers enhanced performance and efficiency in power control applications.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates lower conduction losses, resulting in higher efficiency and reduced power dissipation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration in various electronic devices.

No. of Elements: 12

Higher number of elements provide more flexibility and control in power control applications.

No. of Terminals: 44

More terminals allow for better connectivity and control options in complex power systems.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy installation and heat dissipation capabilities.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in harsh industrial environments.

Maximum Collector-Emitter Voltage: 1200 V

High Collector-Emitter voltage rating allows for use in high voltage applications.

Transistor Element Material: SILICON

Silicon material offers good thermal and electrical properties for efficient power control.

Maximum Gate-Emitter Voltage: 20 V

High Gate-Emitter voltage rating provides better control and protection against overvoltage conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in extreme cold environments.

Maximum Collector Current (IC): 40 A

High Collector current rating allows for handling high power loads in power control applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Low Gate-Emitter threshold voltage ensures easy turn-on and control of the IGBT.

Terminal Position: UPPER

Upper terminal position provides ease of connectivity and wiring in a system.

Case Connection: ISOLATED

Isolated case connection ensures safety and protection against electrical short circuits.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NXH40T120L2Q1SG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X44

No. of Elements:

12

No. of Terminals:

44

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.1 V

Trade Compliance

NXH40T120L2Q1SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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