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FGAF40S65AQ

Onsemi

FGAF40S65AQ by Onsemi

FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.

Median Price

$3.340

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 36 parts In-Stock

1+ parts

$2.580

100+ parts

-

1k+ parts

-

10k+ parts

-

36

$2.580

-

-

-

Mouser Electronics

USA . 101 parts In-Stock

1+ parts

$3.340

100+ parts

-

1k+ parts

$1.520

10k+ parts

-

101

$3.340

-

$1.520

-

DigiKey

USA . 30 parts In-Stock

1+ parts

$3.340

100+ parts

$2.156

1k+ parts

$1.676

10k+ parts

$1.467

30

$3.340

$2.156

$1.676

$1.467

Element14

Singapore . 36 parts In-Stock

1+ parts

$4.090

100+ parts

$2.900

1k+ parts

$2.620

10k+ parts

-

36

$4.090

$2.900

$2.620

-

Chip1Stop

Japan . 131 parts In-Stock

1+ parts

$8.500

100+ parts

$3.640

1k+ parts

-

10k+ parts

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131

$8.500

$3.640

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Flip Electronics (Authorized)

USA . 48,690 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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48,690

-

-

-

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Rochester

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.180

10k+ parts

$1.110

90

-

$1.320

$1.180

$1.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,091 parts In-Stock

1+ parts

$1.311

100+ parts

-

1k+ parts

-

10k+ parts

-

2,091

$1.311

-

-

-

Demsay Elektronik

Türkiye . 40,000 parts In-Stock

1+ parts

$1.500

100+ parts

$1.500

1k+ parts

$1.500

10k+ parts

-

40,000

$1.500

$1.500

$1.500

-

Flip Electronics

USA . 64,631 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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64,631

-

-

-

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Vyrian

USA . 4,176 parts In-Stock

1+ parts

-

100+ parts

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4,176

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ComSIT Distribution GmbH

Germany . 1,350 parts In-Stock

1+ parts

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100+ parts

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1,350

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.545

100+ parts

$0.496

1k+ parts

$0.447

10k+ parts

-

40

$0.545

$0.496

$0.447

-

Corphita

USA . 2,176 parts In-Stock

1+ parts

$1.242

100+ parts

-

1k+ parts

-

10k+ parts

-

2,176

$1.242

-

-

-

Corohmni

South Africa . 130 parts In-Stock

1+ parts

$1.380

100+ parts

-

1k+ parts

-

10k+ parts

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130

$1.380

-

-

-

Continental Prestige Electronics

USA . 43 parts In-Stock

1+ parts

$2.670

100+ parts

$1.950

1k+ parts

$1.640

10k+ parts

-

43

$2.670

$1.950

$1.640

-

Microchip USA

USA . 3,481 parts In-Stock

1+ parts

$26.130

100+ parts

-

1k+ parts

-

10k+ parts

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3,481

$26.130

-

-

-

Native Components

USA . 860 parts In-Stock

1+ parts

$424.010

100+ parts

$415.530

1k+ parts

$411.290

10k+ parts

$407.050

860

$424.010

$415.530

$411.290

$407.050

Northwest PG Solutions

USA . 1,806 parts In-Stock

1+ parts

$466.411

100+ parts

-

1k+ parts

-

10k+ parts

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1,806

$466.411

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 13,429 parts In-Stock

1+ parts

-

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13,429

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Kepictronics

USA . 11,830 parts In-Stock

1+ parts

-

100+ parts

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11,830

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-

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SupplyDigital Components

Austria . 8,072 parts In-Stock

1+ parts

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8,072

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Kulean Microsystems

USA . 5,978 parts In-Stock

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5,978

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Problanco Electronics

Mexico . 3,775 parts In-Stock

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3,775

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Perfect Parts

USA . 1,304 parts In-Stock

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1,304

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TANS Electronics

Latvia . 685 parts In-Stock

1+ parts

-

100+ parts

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685

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UHIMA Technologies

Türkiye . 280 parts In-Stock

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280

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GreenTree Electronics

Israel . 231 parts In-Stock

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231

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-

Overview

Elevate your general purpose switching applications with the high-quality FGAF40S65AQ Insulated Gate Bipolar Transistor (IGBT) by Onsemi. With a maximum VCEsat of 2.1V and a maximum collector current (IC) of 80A, this N-channel transistor offers exceptional performance and reliability. Its single configuration with built-in diode simplifies installation, while the flange mount package ensures easy mounting. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your design with the FGAF40S65AQ for optimal efficiency and power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and reliability to the product for long-term usage.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their efficient operation and high switching speeds.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and improves overall efficiency.

Transistor Application: GENERAL PURPOSE SWITCHING

Suitable for a wide range of switching applications, offering flexibility in use.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates lower power losses and higher efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and mounting in various systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

Nominal Turn Off Time (toff): 90.8 ns

Fast turn-off time enhances the switching speed and performance of the IGBT.

Maximum Power Dissipation (Abs): 94 W

High power dissipation capability ensures reliable operation under heavy loads.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure and stable mounting in industrial applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for operation in harsh environments.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating enables the IGBT to handle high voltage applications.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability for the IGBT.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage tolerance ensures reliable and stable gate control.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments.

Maximum Collector Current (IC): 80 A

High collector current rating allows the IGBT to handle high current loads.

Maximum Gate-Emitter Threshold Voltage: 6.6 V

Low gate-emitter threshold voltage ensures efficient gate control.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and corrosion resistance for terminals.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Case Connection: ISOLATED

Isolated case connection enhances safety and protects against voltage leaks.

Nominal Turn On Time (ton): 30.3 ns

Fast turn-on time ensures quick response and efficient switching performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGAF40S65AQ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

90.8 ns

Nominal Turn On Time (ton):

30.3 ns

Maximum VCEsat:

2.1 V

Trade Compliance

FGAF40S65AQ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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