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FGAF20N60SMD

Onsemi

FGAF20N60SMD by Onsemi

FGAF20N60SMD by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage. It has a 40A max collector current and 75W max power dissipation, ideal for MOTOR CONTROL applications. With a turn-off time of 109ns and fall time of 27ns, it offers efficient performance in through-hole package style.

Median Price

$2.100

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Rochester

USA . 220,700 parts In-Stock

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-

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$1.880

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$1.680

10k+ parts

$1.580

220,700

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$1.880

$1.680

$1.580

Verical

USA . 209,540 parts In-Stock

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$2.100

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$1.975

209,540

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$2.100

$1.975

DigiKey

USA . 314 parts In-Stock

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$2.480

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314

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$2.480

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Digiode

USA . 2,318 parts In-Stock

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$1.976

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2,318

$1.976

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Vyrian

USA . 795 parts In-Stock

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$2.080

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$2.080

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Cyclops Electronics Ltd

UK . 512 parts In-Stock

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512

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DigiKey Marketplace

USA . 314 parts In-Stock

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314

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Corohmni

South Africa . 206 parts In-Stock

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$0.829

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206

$0.829

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Corphita

USA . 3,253 parts In-Stock

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$1.872

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3,253

$1.872

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Advanced Electronics

New Zealand . 42 parts In-Stock

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$2.318

100+ parts

$2.109

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$1.901

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42

$2.318

$2.109

$1.901

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Perfect Parts

USA . 22,579 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,151 parts In-Stock

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SupplyDigital Components

Austria . 8,077 parts In-Stock

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TANS Electronics

Latvia . 7,786 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,091 parts In-Stock

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Kulean Microsystems

USA . 5,195 parts In-Stock

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Authorized Procurement Solutions

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Alle Elektronik GmbH

Germany . 4,727 parts In-Stock

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Kepictronics

USA . 1,440 parts In-Stock

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ChipstoGo Electronic ltd

UK . 569 parts In-Stock

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569

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Supply Digital

USA . 482 parts In-Stock

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482

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Northwest PG Solutions

USA . 438 parts In-Stock

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Problanco Electronics

Mexico . 384 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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iodParts Technologies Inc.

India . 243 parts In-Stock

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Native Components

USA . 40 parts In-Stock

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Overview

Unleash the power of your motor control applications with the FGAF20N60SMD Insulated Gate Bipolar Transistor by Onsemi. With a focus on quality and reliability, Onsemi delivers top-notch performance in a compact package. This N-CHANNEL transistor comes with a built-in diode for added convenience. Perfect for a range of applications, this transistor offers exceptional value and efficiency with a maximum operating temperature of 175 °C and a collector-emitter voltage of 600V. Upgrade your projects today with Onsemi's FGAF20N60SMD!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high input impedance and fast switching speeds, making them ideal for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protects against reverse voltage spikes, improving overall performance and reliability.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT is optimized for efficiency and precision in controlling the speed and direction of motors.

Maximum Fall Time (tf): 27 ns

The fast fall time ensures quick switching speeds, reducing power losses and improving overall efficiency in motor control applications.

Nominal Turn Off Time (toff): 109 ns

The nominal turn off time affects the switching speed of the IGBT, ensuring precise control over the motor operation.

Maximum Power Dissipation (Abs): 75 W

With a high maximum power dissipation rating, this IGBT can handle high power levels while maintaining stable performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and heat dissipation, making it suitable for industrial motor control applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in demanding environments, extending the lifespan of the IGBT.

Maximum Collector-Emitter Voltage: 600 V

The high maximum voltage rating allows for compatibility with a wide range of applications, providing flexibility in motor control designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making it a suitable choice for high-performance IGBTs.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage allows for precise control over the switching behavior of the IGBT, improving overall performance.

Maximum Collector Current (IC): 40 A

With a high maximum collector current rating, this IGBT can handle high current loads, making it suitable for motor control applications.

Maximum Gate-Emitter Threshold Voltage: 6 V

The gate-emitter threshold voltage affects the turn-on behavior of the IGBT, ensuring reliable and precise control over the motor operation.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring a secure connection in motor control circuits.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and minimizes the chances of wiring errors, improving overall reliability.

Case Connection: ISOLATED

The isolated case connection provides extra safety and protection against electrical faults, ensuring reliable operation in motor control applications.

Nominal Turn On Time (ton): 31 ns

The nominal turn on time affects the switching behavior of the IGBT, ensuring precise control over the motor speed and direction.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGAF20N60SMD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

27 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

109 ns

Nominal Turn On Time (ton):

31 ns

Trade Compliance

FGAF20N60SMD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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