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NVG800A75L4DSC

Onsemi

NVG800A75L4DSC by Onsemi

NVG800A75L4DSC by Onsemi is an N-CHANNEL IGBT with 750V VCE, 800A IC, and 1.55V VCEsat. Ideal for power control applications, it features a series connected configuration with built-in diode and operates b/w -40 to 175°C.

Median Price

$292.240

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 5 parts In-Stock

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Vyrian

USA . 3,906 parts In-Stock

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Digiode

USA . 1,628 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Flip Electronics

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Microfarads

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AZTECH Wire

Italy . 266 parts In-Stock

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Ampacity Inc.

Singapore . 1,621 parts In-Stock

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$24.050

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Microchip USA

USA . 8,109 parts In-Stock

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$536.860

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

Latvia . 5,634 parts In-Stock

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Kulean Microsystems

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Netroflash

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Corohmni

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Perfect Parts

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UHIMA Technologies

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GreenTree Electronics

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Corphita

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Overview

Discover the power and reliability of the NVG800A75L4DSC by Onsemi, a top-tier manufacturer in the electronic industry. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance for power control applications, with a maximum collector current of 800 A and a nominal turn-on time of just 347 ns. Designed for efficiency and durability, this N-channel transistor is ideal for high-voltage operations, providing a seamless experience for all your power control needs. Trust in Onsemi's commitment to quality and innovation with the NVG800A75L4DSC, where excellence meets reliability.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them suitable for power control applications.

Configuration: SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

This configuration allows for easier integration into circuits and offers built-in protection, making it a convenient choice for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable performance in high power systems.

Maximum VCEsat: 1.55 V

With a low VCEsat value, this IGBT minimizes power loss and offers high efficiency in power control applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement within circuits, enhancing the overall usability of this IGBT.

Nominal Turn Off Time (toff): 855 ns

The fast turn-off time of 855 ns ensures rapid switching speeds, reducing power loss and improving overall efficiency in power control applications.

Maximum Collector-Emitter Voltage: 750 V

With a high maximum collector-emitter voltage, this IGBT is capable of handling high voltage levels in power control applications.

Maximum Collector Current (IC): 800 A

The high maximum collector current rating of 800 A allows for the handling of large amounts of current in power control applications.

Maximum Gate-Emitter Voltage: 20 V

With a maximum gate-emitter voltage of 20 V, this IGBT offers reliable and consistent performance in power control applications.

Nominal Turn On Time (ton): 347 ns

The fast turn-on time of 347 ns ensures quick response and efficient operation in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NVG800A75L4DSC attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Maximum Gate-Emitter Threshold Voltage:

6.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XXMA-X15

No. of Elements:

2

No. of Terminals:

15

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

855 ns

Nominal Turn On Time (ton):

347 ns

Maximum VCEsat:

1.55 V

Trade Compliance

NVG800A75L4DSC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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