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NGD15N41CLT4

Onsemi

NGD15N41CLT4 by Onsemi

NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,873 parts In-Stock

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Digiode

USA . 1,082 parts In-Stock

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Rebound Electronics

UK . 100 parts In-Stock

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AZTECH Wire

Italy . 397 parts In-Stock

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$14.180

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Ampacity Inc.

Singapore . 1,354 parts In-Stock

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$17.050

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Component Stockers USA

USA . 296 parts In-Stock

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$99.990

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Kepictronics

USA . 15,000 parts In-Stock

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Kulean Microsystems

USA . 6,392 parts In-Stock

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TANS Electronics

Latvia . 6,036 parts In-Stock

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SupplyDigital Components

Austria . 3,768 parts In-Stock

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Problanco Electronics

Mexico . 2,522 parts In-Stock

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Corphita

USA . 2,225 parts In-Stock

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UHIMA Technologies

Türkiye . 224 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Revolutionize your automotive ignition systems with the NGD15N41CLT4 Insulated Gate Bipolar Transistor from Onsemi. Designed with quality and precision in mind, this N-CHANNEL transistor offers a single configuration with a built-in diode and resistor, making it the perfect solution for your ignition needs. With a maximum power dissipation of 107W and a maximum operating temperature of 175 °C, this transistor ensures optimal performance and reliability in any automotive application. Upgrade your systems today and experience the benefits of superior technology with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and performance in applications requiring N-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components into the transistor.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance in demanding environments.

Maximum Power Dissipation (Abs): 107 W

Capable of handling high power levels, making it suitable for automotive and industrial applications.

Maximum Operating Temperature: 175 °C

Can operate efficiently at high temperatures, providing reliability in harsh conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGD15N41CLT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

15500 ns

Nominal Turn On Time (ton):

5700 ns

Trade Compliance

NGD15N41CLT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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