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NGD18N45CLBT4G

Littelfuse

NGD18N45CLBT4G by Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 18 A; No. of Elements: 1; JESD-30 Code: R-PSSO-G2;

Median Price

$0.661

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Arrow

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$0.556

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$0.529

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Chip1Stop

Japan . 69 parts In-Stock

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Rochester

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$0.567

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Verical

USA . 69 parts In-Stock

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Vyrian

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Corohmni

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Microchip USA

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGD18N45CLBT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

5400 ns

Nominal Turn On Time (ton):

2920 ns

Trade Compliance

NGD18N45CLBT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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