Loading...

NGD15N41ACLT4G

Onsemi

NGD15N41ACLT4G by Onsemi

NGD15N41ACLT4G by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 107 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 440 V, such as power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 23,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,500

-

-

-

-

Digiode

USA . 1,152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,152

-

-

-

-

Vyrian

USA . 1,071 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,071

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.342

100+ parts

$2.131

1k+ parts

$1.920

10k+ parts

-

3,000

$2.342

$2.131

$1.920

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 29,158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,158

-

-

-

-

Kepictronics

USA . 10,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,500

-

-

-

-

Kulean Microsystems

USA . 6,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,711

-

-

-

-

Problanco Electronics

Mexico . 4,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,759

-

-

-

-

TANS Electronics

Latvia . 4,727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,727

-

-

-

-

SupplyDigital Components

Austria . 3,204 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,204

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,250

-

-

-

-

Perfect Parts

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,400

-

-

-

-

Corohmni

South Africa . 357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

357

-

-

-

-

Corphita

USA . 77 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

77

-

-

-

-

UHIMA Technologies

Türkiye . 22 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22

-

-

-

-

Overview

Elevate your electronic designs with the NGD15N41ACLT4G by Onsemi, a top-quality N-CHANNEL IGBT that delivers reliable performance and efficient power management. Manufactured by Onsemi, a trusted name in semiconductor technology, this IGBT is perfect for a wide range of applications. With a maximum collector-emitter voltage of 440V and a maximum collector current of 15A, this IGBT offers exceptional power dissipation and temperature tolerance. Take your projects to the next level with the NGD15N41ACLT4G and experience the value and benefits of superior quality components.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speed, making them suitable for various applications like motor drives and power inverters.

Surface Mount: YES

Surface mount IGBTs are compact and versatile, making them easy to integrate into different electronic designs.

Maximum Rise Time (tr): 7000 ns

The fast rise time of 7000 ns ensures quick switching performance, reducing switching losses and improving overall efficiency of the circuit.

Maximum Fall Time (tf): 15000 ns

The fall time of 15000 ns allows for efficient turn-off of the IGBT, minimizing losses and improving the reliability of the device.

Maximum Power Dissipation (Abs): 107 W

With a high power dissipation capability of 107 W, this IGBT can handle high power loads without overheating, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C allows for operation in a wide range of environments, making the IGBT suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 440 V

The high maximum collector-emitter voltage of 440 V enables the IGBT to handle high voltage applications with ease.

Maximum Gate-Emitter Voltage: 15 V

The maximum gate-emitter voltage of 15 V ensures reliable and precise control of the IGBT, enhancing the performance of the circuit.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this IGBT can handle high current loads, making it suitable for power electronics applications.

Maximum Gate-Emitter Threshold Voltage: 1.9 V

The low gate-emitter threshold voltage of 1.9 V allows for efficient switching of the IGBT, reducing power losses and improving overall efficiency.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and conductivity, ensuring reliable and secure connections.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering of the IGBT during assembly, preventing damage to the device.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for high-temperature soldering of the IGBT, ensuring strong and reliable connections.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGD15N41ACLT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

15 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NGD15N41ACLT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13