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NGD18N40CLBT4G

Onsemi

NGD18N40CLBT4G by Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Package Style (Meter): SMALL OUTLINE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 18,260 parts In-Stock

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Vyrian

USA . 2,243 parts In-Stock

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Digiode

USA . 1,620 parts In-Stock

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LWI Electronics Inc

India . 812 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 847 parts In-Stock

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$31.050

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847

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Perfect Parts

USA . 39,740 parts In-Stock

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39,740

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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Kulean Microsystems

USA . 5,013 parts In-Stock

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Assy Fe

Spain . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,823 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,813 parts In-Stock

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TANS Electronics

Latvia . 1,722 parts In-Stock

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Corphita

USA . 1,679 parts In-Stock

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UHIMA Technologies

Türkiye . 930 parts In-Stock

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Problanco Electronics

Mexico . 711 parts In-Stock

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Futuretech Components

Singapore . 658 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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458

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGD18N40CLBT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

430 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

18 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

13000 ns

Nominal Turn On Time (ton):

5200 ns

Trade Compliance

NGD18N40CLBT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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