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IXGN400N60B3

Littelfuse

IXGN400N60B3 by Littelfuse

IXGN400N60B3 by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. With a VCEsat of 1.5V, it has a max collector-emitter voltage of 600V and can handle up to 430A collector current. Its package style is FLANGE MOUNT with isolated case connection, suitable for high-power operations at temperatures ranging from -55°C to 150°C.

Median Price

$65.030

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Mouser Electronics

USA . 462 parts In-Stock

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DigiKey

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$65.030

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$49.188

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Ozdisan Elektronik

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$81.732

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NAC Semi

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$9.068

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$9.068

Ampacity Inc.

Singapore . 177 parts In-Stock

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Component Stockers USA

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$37.980

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Microchip USA

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Overview

Enhance your power control applications with the IXGN400N60B3 by Littelfuse, a top-quality Insulated Gate Bipolar Transistor (IGBT) designed for efficiency and reliability. Manufactured by Littelfuse, a trusted name in the industry, this N-CHANNEL transistor offers a maximum VCEsat of 1.5V and a maximum collector-emitter voltage of 600V. With a maximum power dissipation of 1000W and quick turn-on/off times, this transistor is perfect for a wide range of power control applications. Trust Littelfuse to deliver superior performance and value with the IXGN400N60B3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, ensuring reliability and durability.

Maximum VCEsat: 1.5 V

Low saturation voltage results in lower power dissipation and efficient power control.

Maximum Fall Time (tf): 200 ns

Fast fall time allows for quick switching, improving overall efficiency in power control applications.

Maximum Power Dissipation (Abs): 1000 W

High power dissipation capability allows for handling large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating enables the transistor to be used in high-power applications without risk of damage.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGN400N60B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

200 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

345 ns

Nominal Turn On Time (ton):

100 ns

Maximum VCEsat:

1.5 V

Trade Compliance

IXGN400N60B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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