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IXGN200N60B3

Littelfuse

IXGN200N60B3 by Littelfuse

IXGN200N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 300A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a fast fall time of 300ns and UL RECOGNIZED certification.

Median Price

$44.444

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Farnell

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$19.110

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$50.810

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$40.230

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Verical

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$48.679

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TME

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Continental Prestige Electronics

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$29.560

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Microchip USA

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Overview

Discover the power of the Littelfuse IXGN200N60B3 Insulated Gate Bipolar Transistor (IGBT). With a maximum VCEsat of just 1.5V and a maximum collector-emitter voltage of 600V, this N-channel transistor is perfect for power control applications. The quality and reliability of Littelfuse as a manufacturer ensures that this transistor will deliver excellent performance and longevity. Whether you're working on industrial machinery or renewable energy systems, the IXGN200N60B3 offers unmatched value, benefits, and advantages to help you achieve optimal efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

Efficient and reliable control of power flow in the circuit.

Maximum VCEsat: 1.5 V

Low saturation voltage leads to higher efficiency and less power loss.

Maximum Fall Time (tf): 300 ns

Fast switching time improves overall performance of the device.

Maximum Power Dissipation (Abs): 830 W

Capable of handling high power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high temperature environments, making it versatile for various applications.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltage levels safely, making it suitable for power control applications.

Maximum Gate-Emitter Voltage: 20 V

Provides precise control over the gate signal, ensuring reliable performance.

Maximum Turn Off Time (toff): 750 ns

Fast turn-off time improves efficiency and reduces power loss.

Nominal Turn On Time (ton): 127 ns

Fast turn-on time enhances the overall performance of the device in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGN200N60B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

300 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

750 ns

Nominal Turn Off Time (toff):

493 ns

Nominal Turn On Time (ton):

127 ns

Maximum VCEsat:

1.5 V

Trade Compliance

IXGN200N60B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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