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IXBK64N250

IXYS Corporation

IXBK64N250 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-PSFM-T3;

Median Price

$90.910

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 79 parts In-Stock

1+ parts

$90.910

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79

$90.910

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Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 25 parts In-Stock

1+ parts

$219.298

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25

$219.298

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NAC Semi

USA . 20 parts In-Stock

1+ parts

$492.940

100+ parts

$448.130

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20

$492.940

$448.130

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

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Microchip USA

USA . 2,450 parts In-Stock

1+ parts

$162.510

100+ parts

$158.170

1k+ parts

$156.010

10k+ parts

$153.840

2,450

$162.510

$158.170

$156.010

$153.840

Ampacity Inc.

Singapore . 139 parts In-Stock

1+ parts

$268.210

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139

$268.210

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Argo Parts USA

USA . 4,595 parts In-Stock

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4,595

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Continental Prestige Electronics

USA . 3,472 parts In-Stock

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3,472

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 56 parts In-Stock

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56

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Authorized Procurement Solutions

USA . 25 parts In-Stock

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25

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBK64N250 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

397 ns

Nominal Turn On Time (ton):

632 ns

Trade Compliance

IXBK64N250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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