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IXBK75N170

IXYS Corporation

IXBK75N170 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 200 A; Maximum Collector-Emitter Voltage: 1700 V;

Median Price

$69.750

Lifecycle Status

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DigiKey

USA . 343 parts In-Stock

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$63.200

100+ parts

$47.505

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343

$63.200

$47.505

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Newark

USA . 300 parts In-Stock

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$65.100

100+ parts

$48.930

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300

$65.100

$48.930

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Mouser Electronics

USA . 659 parts In-Stock

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$69.750

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$57.000

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659

$69.750

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Verical

USA . 21 parts In-Stock

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$95.326

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$79.114

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$79.114

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Element14

Singapore . 18 parts In-Stock

1+ parts

$5,468.090

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$4,594.920

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18

$5,468.090

$4,594.920

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Ozdisan Elektronik

Türkiye . 7 parts In-Stock

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$80.120

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$80.120

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Nova Conductors

Japan . 100 parts In-Stock

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NAC Semi

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Ampacity Inc.

Singapore . 180 parts In-Stock

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$34.940

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180

$34.940

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Continental Prestige Electronics

USA . 4 parts In-Stock

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$56.980

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$48.870

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$56.980

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Component Stockers USA

USA . 149 parts In-Stock

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$61.610

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$50.420

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149

$61.610

$50.420

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Microchip USA

USA . 6,831 parts In-Stock

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$149.201

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QUARKTWIN TECHNOLOGY LTD

USA . 29,122 parts In-Stock

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Argo Parts USA

USA . 2,263 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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25

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GreenTree Electronics

Israel . 17 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBK75N170 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

840 ns

Nominal Turn On Time (ton):

277 ns

Trade Compliance

IXBK75N170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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