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IXDH35N60BD1

IXYS Corporation

IXDH35N60BD1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 5 V;

Median Price

$5.800

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 57 parts In-Stock

1+ parts

$5.800

100+ parts

$4.150

1k+ parts

-

10k+ parts

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57

$5.800

$4.150

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Nova Conductors

Japan . 98 parts In-Stock

1+ parts

-

100+ parts

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98

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.246

100+ parts

$1.134

1k+ parts

$1.022

10k+ parts

-

350

$1.246

$1.134

$1.022

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Ampacity Inc.

Singapore . 414 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

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414

$4.050

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Component Stockers USA

USA . 623 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

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10k+ parts

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623

$99.990

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Perfect Parts

USA . 34 parts In-Stock

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34

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDH35N60BD1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

75 ns

Trade Compliance

IXDH35N60BD1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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