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IXDH20N120

Littelfuse

IXDH20N120 by Littelfuse

IXDH20N120 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 38A max collector current, and 200W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-off time of 570ns.

Median Price

$6.496

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Verical

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TME

Poland . 195 parts In-Stock

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$7.210

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Component Electronics Inc.

Canada . 37 parts In-Stock

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$9.230

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$6.920

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Forefront Electronics and Design

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Nova Conductors

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ACDS - Activité Composants Distribution Service

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Component Stockers USA

USA . 425 parts In-Stock

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$4.740

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Ampacity Inc.

Singapore . 1,597 parts In-Stock

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Microchip USA

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Overview

Experience unparalleled performance with the Littelfuse IXDH20N120 Insulated Gate Bipolar Transistor (IGBT). Crafted with precision and expertise by Littelfuse, this N-channel transistor is ideal for motor control applications, offering unrivaled reliability and efficiency. With a maximum power dissipation of 200W and a collector-emitter voltage of 1200V, this IGBT ensures optimal performance even in the most demanding scenarios. Trust Littelfuse to deliver quality and innovation with the IXDH20N120, your ultimate solution for superior motor control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IGBT, making it suitable for various industrial applications.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring efficient and reliable operation in controlling motor speed and direction.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand harsh environmental conditions and extended usage without overheating.

Maximum Collector-Emitter Voltage: 1200 V

Capable of handling high voltage levels, making it suitable for applications requiring high power and voltage handling capabilities.

Maximum Collector Current (IC): 38 A

With a high collector current rating, this IGBT can handle high current loads without compromising performance or reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDH20N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

175 ns

Trade Compliance

IXDH20N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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