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IXDH20N120D1

Littelfuse

IXDH20N120D1 by Littelfuse

IXDH20N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 38A max collector current, and 275W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 570ns.

Median Price

$5.650

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UK . 20 parts In-Stock

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$4.020

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Nova Conductors

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TME

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$4.580

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$5.667

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$1.838

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Continental Prestige Electronics

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$4.940

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AZTECH Wire

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Overview

Discover the superior performance and reliability of the IXDH20N120D1 by Littelfuse, a leading manufacturer in the industry. As an insulated gate bipolar transistor (IGBT), this product is ideal for motor control applications, offering seamless operation and efficient power management. With a single configuration and built-in diode, this transistor provides convenience and ease of use. Trust Littelfuse to deliver quality products that exceed your expectations, ensuring optimal functionality and long-lasting durability. Experience the difference with the IXDH20N120D1 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components, making it a reliable choice for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state resistance and better conductivity compared to P-channel IGBTs, resulting in improved efficiency and performance.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT provides a high level of precision and control over the operation of motors, making it suitable for a wide range of industrial and automotive applications.

Maximum Power Dissipation (Abs): 275 W

With a high maximum power dissipation capacity of 275W, this IGBT can handle heavy loads and high power requirements, ensuring reliable operation even under demanding conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the IGBT to operate efficiently in a wide range of temperature conditions, making it suitable for various industrial applications where temperature fluctuations may occur.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating of 1200V ensures that the IGBT can handle high voltage levels without breakdown, making it suitable for power electronics applications where high voltage switching is required.

Maximum Collector Current (IC): 38 A

With a maximum collector current rating of 38A, this IGBT can handle high current loads, making it suitable for applications where high power switching is necessary.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage rating of 20V ensures that the IGBT can be controlled effectively with low voltage signals, providing precise and efficient switching control.

Nominal Turn On Time (ton): 175 ns

The fast nominal turn-on time of 175ns allows for quick switching speeds, reducing power losses and improving overall efficiency in high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDH20N120D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

175 ns

Trade Compliance

IXDH20N120D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-624-1211, 5961016241211

NIIN

016241211

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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