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IGP10N60T

Infineon Technologies

IGP10N60T by Infineon Technologies

Infineon Technologies' IGP10N60T is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. It has a power dissipation of 110W and turn-off time of 296ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities. The package style is flange mount with through-hole terminals, suitable for single configuration setups in various electronic systems.

Median Price

$1.720

Lifecycle Status

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4

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1k+

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Mouser Electronics

USA . 899 parts In-Stock

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$1.720

100+ parts

$0.726

1k+ parts

$0.520

10k+ parts

$0.473

899

$1.720

$0.726

$0.520

$0.473

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Digiode

USA . 735 parts In-Stock

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$1.434

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735

$1.434

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TME

Poland . 379 parts In-Stock

1+ parts

$1.500

100+ parts

$1.100

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379

$1.500

$1.100

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Vyrian

USA . 25 parts In-Stock

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$1.510

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25

$1.510

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Modulus Dynamics

Lithuania . 20,631 parts In-Stock

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$0.717

100+ parts

$0.688

1k+ parts

$0.660

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-

20,631

$0.717

$0.688

$0.660

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Corphita

USA . 491 parts In-Stock

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$1.359

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491

$1.359

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Lixinc

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8,389

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Perfect Parts

USA . 560 parts In-Stock

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560

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Overview

Unlock the power of cutting-edge technology with the IGP10N60T from Infineon Technologies. As a leading manufacturer in the industry, Infineon guarantees top-notch quality and reliability. This Insulated Gate Bipolar Transistor (IGBT) is perfect for power control applications, offering a nominal turn-off time of 296 ns and a maximum collector-emitter voltage of 600V. With a maximum power dissipation of 110W, this N-channel transistor provides unmatched performance. Experience seamless operation and enhanced efficiency with the IGP10N60T, the ultimate choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT, making it suitable for various operating environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and switching capabilities in electronic circuits.

Configuration: SINGLE

Simplifies the design and integration of the IGBT into power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring high performance and reliability in such scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation of the IGBT in electronic circuits or systems.

Nominal Turn Off Time (toff): 296 ns

Fast turn off time ensures efficient switching and control of power in the circuit, leading to improved overall performance.

Maximum Power Dissipation (Abs): 110 W

Ability to dissipate up to 110 watts of power without damage, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, ensuring stable operation of the IGBT.

Maximum Operating Temperature: 175 °C

Can operate reliably at temperatures up to 175°C, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 600 V

Capable of handling high voltage levels, making it suitable for power control applications where high voltage is involved.

Transistor Element Material: SILICON

Silicon-based construction provides high performance and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for gate-emitter control, ensuring protection against voltage spikes or surges.

Maximum Collector Current (IC): 20 A

High collector current rating allows for handling of large currents in power control applications.

Maximum Gate-Emitter Threshold Voltage: 5.7 V

Threshold voltage for efficient gate control, ensuring precise switching in power control circuits.

Terminal Finish: TIN

Tin finish provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplified terminal configuration for ease of installation and connectivity in electronic circuits.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and electrical connectivity in power control applications.

Nominal Turn On Time (ton): 21 ns

Fast turn on time ensures quick response and control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP10N60T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

296 ns

Nominal Turn On Time (ton):

21 ns

Trade Compliance

IGP10N60T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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