Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;
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Microchip USA
Insulated Gate Bipolar Transistors (IGBT) SIGC42T60UNX1SA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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SIGC42T60UNX1SA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317TG
Onsemi
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Bytesonic Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
2N2222A
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Vishay Telefunken
STM32H750VBT6
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
STM32H753IIK6
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Panjit International
Vishay Intertechnology
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
FP15R12KE3GBOSA1
Infineon Technologies
Infineon Technologies' FP15R12KE3GBOSA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 25A. It has a toff of 610ns and ton of 135ns, suitable for high-power applications like motor drives and inverters due to its complex configuration and isolated case connection.
FS35R12KT3BPSA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NGTB40N120FL2WG
NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IXXH75N60C3D1
Littelfuse
IXXH75N60C3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 150A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a fast turn-off time of 185ns.
IKW40N65ES5XKSA1
IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
FF600R12ME4B11BPSA1
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IXDH30N120D1
IXDH30N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 435W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 570ns.
CM200TX-24T
Mitsubishi Electric
Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.
FGH30S130P
FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
NGTB40N120S3WG
NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
FD300R06KE3HOSA1
Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.
IXLF19N250A
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
IRG4BC30KDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT;
APT85GR120JD60
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
IRG4PC50WPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
APT75GP120JDQ3
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
IRGP50B60PD1PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;
IGW50N60TXK
IGW50N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations at up to 175°C.
CM600DU-12NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
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SIGC186T170R3EX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 2.4 V; No. of Terminals: 9; Maximum Operating Temperature: 175 Cel;
SIGC03T60SEX1SA1
N-CHANNEL; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Threshold Voltage: 5.7 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SIGC04T60GSE
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-XUUC-N2; No. of Elements: 1;
SIGC03T60X1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;
SIGC04T60GEX1SA1
N-CHANNEL; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
SIGC03T60SNCX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
SIGC04T60GSEX1SA1
N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SIGC03T60EX1SA1
N-CHANNEL; Maximum Collector Current (IC): 4 A; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
SIGC03T60SN
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;
SIGC04T60
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; No. of Terminals: 2;
SIGC04T60E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
SIGC04T60GE
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V;
SIGC03T60SNCX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: SQUARE; Maximum Operating Temperature: 150 Cel;
SIGC04T60GS
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Qualification: Not Qualified; No. of Elements: 1;
SIGC03T60SE
N-Channel; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 5.7 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum VCEsat: 2.05 V;
SIGC04T60EX1SA2
N-CHANNEL; Maximum Collector Current (IC): 6 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SIGC03T60SX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Package Style (Meter): UNCASED CHIP; JESD-609 Code: e3;
SIGC03T60E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 1.9 V; Terminal Form: NO LEAD; Maximum Operating Temperature: 175 Cel;
SIGC03T60S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Position: UPPER; Qualification: Not Qualified;
SIGC03T60SNC
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Nominal Turn Off Time (toff): 354 ns; Qualification: Not Qualified;
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