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SINGLE Insulated Gate Bipolar Transistors (IGBT) 238

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW60H65FB by STMicroelectronics

STGW60H65FB

STMicroelectronics

STGW60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is used for POWER CONTROL applications, featuring a 375W power dissipation and -55 to 175°C operating temperature range.

80 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

STGWT30V60F by STMicroelectronics

STGWT30V60F

STMicroelectronics

STGWT30V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Ptot of 260W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 225ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGWT40H65FB by STMicroelectronics

STGWT40H65FB

STMicroelectronics

STGWT40H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGWT60H65FB by STMicroelectronics

STGWT60H65FB

STMicroelectronics

STGWT60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is designed for POWER CONTROL applications, featuring a max power dissipation of 375W and operating temperature range from -55 °C to 175°C.

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

IGC13T120T8LX1SA1 by Infineon Technologies

IGC13T120T8LX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

SIGC14T60SNCX1SA4 by Infineon Technologies

SIGC14T60SNCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Nominal Turn Off Time (toff): 315 ns;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

315 ns

54 ns

SIGC42T60NCX1SA4 by Infineon Technologies

SIGC42T60NCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

160 ns

55 ns

STGFW30H65FB by STMicroelectronics

STGFW30H65FB

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; JESD-30 Code: R-PSFM-T3;

60 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWT30H65FB by STMicroelectronics

STGWT30H65FB

STMicroelectronics

STGWT30H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 260W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 223ns and low VCEsat of 2V. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGFW40H65FB by STMicroelectronics

STGFW40H65FB

STMicroelectronics

STGFW40H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat, 80A IC, and 62.5W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 to 175 °C).

ISOLATED

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

62.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

IXGM40N60A by IXYS Corporation

IXGM40N60A

IXYS Corporation

IXYS Corporation's IXGM40N60A is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 3V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration, 900ns toff, and 300ns ton. The METAL package with PIN/PEG terminals can handle up to 250W power dissipation at 150°C ambient temperature.

HIGH SPEED

COLLECTOR

75 A

600 V

SINGLE

5 V

20 V

TO-204AE

O-MBFM-P2

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

POWER CONTROL

SILICON

900 ns

300 ns

3 V

IXSH45N120 by IXYS Corporation

IXSH45N120

IXYS Corporation

IXYS Corporation's IXSH45N120 is an N-CHANNEL IGBT transistor with 1200V VCE, 75A IC, and 3V VCEsat. Ideal for MOTOR CONTROL applications, it has a toff of 1650ns and ton of 330ns, housed in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

75 A

1200 V

SINGLE

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1650 ns

330 ns

3 V

IXSN55N120A by IXYS Corporation

IXSN55N120A

IXYS Corporation

IXYS Corporation's IXSN55N120A is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 140ns ton. Ideal for POWER CONTROL applications, it has a SINGLE configuration in a FLANGE MOUNT package with 4 terminals.

ISOLATED

80 A

1200 V

SINGLE

R-XUFM-X4

1

4

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

600 ns

140 ns

IXSH24N60A by IXYS Corporation

IXSH24N60A

IXYS Corporation

IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.

HIGH SPEED

COLLECTOR

48 A

600 V

SINGLE

500 ns

6.5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

925 ns

300 ns

2.7 V

IXSH45N100 by IXYS Corporation

IXSH45N100

IXYS Corporation

IXYS Corporation's IXSH45N100 is an N-CHANNEL IGBT with 1000V VCEsat, 75A IC, and 300W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 2750ns and operates up to 150°C.

COLLECTOR

75 A

1000 V

SINGLE

1500 ns

7 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2750 ns

400 ns

2.7 V

IXGH39N60B by IXYS Corporation

IXGH39N60B

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 76 A; Nominal Turn On Time (ton): 55 ns;

FAST

COLLECTOR

76 A

600 V

SINGLE

360 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

710 ns

55 ns

IXGH50N60A by IXYS Corporation

IXGH50N60A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;

FAST

COLLECTOR

75 A

600 V

SINGLE

200 ns

5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

880 ns

290 ns

2.7 V

IXGN60N60 by IXYS Corporation

IXGN60N60

IXYS Corporation

IXYS Corporation's IXGN60N60 is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 250W Pd. Ideal for POWER CONTROL applications, it features a toff of 650ns, tf of 700ns, and ton of 50ns. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures efficient heat dissipation up to 150°C.

FAST

ISOLATED

100 A

600 V

SINGLE

700 ns

5 V

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

650 ns

50 ns

IXGH31N60 by IXYS Corporation

IXGH31N60

IXYS Corporation

IXGH31N60 by IXYS Corp is an N-CHANNEL IGBT transistor with VCEsat of 1.8V and IC of 60A. Ideal for POWER CONTROL applications, it has a toff of 1600ns, tf of 1100ns, and can handle up to 150W power dissipation.

COLLECTOR

60 A

600 V

SINGLE

1100 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

40 ns

1.8 V

STGP30H65F by STMicroelectronics

STGP30H65F

STMicroelectronics

STMicroelectronics' STGP30H65F is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2.4V VCEsat. Ideal for POWER CONTROL applications, it has a toff of 234ns and ton of 64ns. The transistor operates b/w -55 °C to 175°C in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGD7NB120S-1 by STMicroelectronics

STGD7NB120S-1

STMicroelectronics

STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.

10 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

840 ns

STGFW80V60F by STMicroelectronics

STGFW80V60F

STMicroelectronics

STGFW80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Ptot of 79W. Ideal for POWER CONTROL applications due to its fast turn-off time (262ns) and high operating temperature range (-55 to 175 °C).

ISOLATED

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

79 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGW80V60F by STMicroelectronics

STGW80V60F

STMicroelectronics

STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.

120 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGWT80V60F by STMicroelectronics

STGWT80V60F

STMicroelectronics

STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.

COLLECTOR

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

25 A

600 V

SINGLE

6.5 V

20 V

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

POWER CONTROL

SILICON

340 ns

31.5 ns

STGD10NC60KT4 by STMicroelectronics

STGD10NC60KT4

STMicroelectronics

STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.

ULTRA FAST

20 A

600 V

SINGLE

6.5 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns

STGP10NC60K by STMicroelectronics

STGP10NC60K

STMicroelectronics

STGP10NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and operates at up to 150 °C. Its fast switching times (ton: 23 ns, toff: 242 ns) enhance efficiency in various electronic systems.

ULTRA FAST

20 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP19NC60W by STMicroelectronics

STGP19NC60W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;

40 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

204 ns

33 ns

STGW35NB60S by STMicroelectronics

STGW35NB60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;

ISOLATED

70 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

3600 ns

153 ns

STGP19NC60S by STMicroelectronics

STGP19NC60S

STMicroelectronics

STGP19NC60S by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 125 W, and operates at up to 150 °C. Its fast switching times (ton: 23.5 ns, toff: 535 ns) enhance performance in various electronic systems.

FREE WHEELING DIODE

COLLECTOR

50 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

535 ns

23.5 ns

STGP8NC60K by STMicroelectronics

STGP8NC60K

STMicroelectronics

STGP8NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 242 ns, and can handle up to 15 A of collector current. This robust device operates efficiently at temperatures up to 150 °C.

15 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns

STGP30NC60S by STMicroelectronics

STGP30NC60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;

COLLECTOR

55 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

175 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGW50NC60W by STMicroelectronics

STGW50NC60W

STMicroelectronics

STGW50NC60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 285 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

100 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

285 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

343 ns

69 ns

STGFW40V60F by STMicroelectronics

STGFW40V60F

STMicroelectronics

STGFW40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 241ns, ton of 73ns, and can operate at temperatures ranging from -55°C to 175°C.

80 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

98.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.

LOW CONDUCTION LOSS

ISOLATED

200 A

600 V

SINGLE

R-PUFM-X4

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

131 ns

STGB30NC60KT4 by STMicroelectronics

STGB30NC60KT4

STMicroelectronics

STGB30NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 41 ns, toff: 290 ns). Ideal for high-performance power management in compact designs.

60 A

600 V

SINGLE

6.5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGB30NC60WT4 by STMicroelectronics

STGB30NC60WT4

STMicroelectronics

STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGP19NC60H by STMicroelectronics

STGP19NC60H

STMicroelectronics

STGP19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

40 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

130 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

272 ns

32 ns

STGP30NC60K by STMicroelectronics

STGP30NC60K

STMicroelectronics

STGP30NC60K from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 185 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGW19NC60H by STMicroelectronics

STGW19NC60H

STMicroelectronics

STGW19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 140 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

272 ns

32 ns

STGF30NC60S by STMicroelectronics

STGF30NC60S

STMicroelectronics

STGF30NC60S from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 555ns, and can handle up to 22A. Ideal for high-temperature environments with a max operating temp of 150 °C.

ISOLATED

22 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGWF30NC60S by STMicroelectronics

STGWF30NC60S

STMicroelectronics

STGWF30NC60S by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 1.9V, supports up to 35A collector current, and operates at temperatures from -55 °C to 150°C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

35 A

600 V

SINGLE

5.75 V

20 V

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

79 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

555 ns

30 ns

1.9 V

STGB20NC60VT4 by STMicroelectronics

STGB20NC60VT4

STMicroelectronics

STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

280 ns

42.5 ns

FGH60N6S2 by Fairchild Semiconductor

FGH60N6S2

Fairchild Semiconductor

FGH60N6S2 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 625W. It has a nominal turn-off time of 187ns, making it suitable for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, ideal for high-power applications in industrial settings.

LOW CONDUCTION LOSS

COLLECTOR

75 A

600 V

SINGLE

90 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

187 ns

59 ns

SIGC109T120R3 by Infineon Technologies

SIGC109T120R3

Infineon Technologies

Infineon's SIGC109T120R3 is an N-CHANNEL IGBT with a max voltage of 1200V and max current of 100A. Ideal for POWER CONTROL applications, it has a turn-off time of 610ns and turn-on time of 330ns. Suitable for surface mount with a max operating temp of 150°C.

100 A

1200 V

SINGLE

6.5 V

20 V

R-XUUC-N

1

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

Insulated Gate BIP Transistors

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

330 ns

STGP10NB60SFP by STMicroelectronics

STGP10NB60SFP

STMicroelectronics

STGP10NB60SFP from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 31.5 W, and operates up to 150 °C. Its through-hole design ensures easy integration in various systems.

ISOLATED

20 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

1160 ns

SGL160N60UFTU by Fairchild Semiconductor

SGL160N60UFTU

Fairchild Semiconductor

SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

160 A

600 V

SINGLE

150 ns

6.5 V

20 V

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

262 ns

150 ns

STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

ISOLATED

200 A

600 V

SINGLE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4600 ns

170 ns

1.6 V