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STGB20NC60VT4

STMicroelectronics

STGB20NC60VT4 by STMicroelectronics

STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,213 parts In-Stock

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Anansix

USA . 403 parts In-Stock

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Digiode

USA . 97 parts In-Stock

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Inventory MP

USA . 45 parts In-Stock

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45

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Bristol Electronics

USA . 45 parts In-Stock

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45

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IDEA Electronic Components Group

UK . 573 parts In-Stock

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$0.955

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$0.859

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573

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$0.859

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MKK Technologies

India . 85 parts In-Stock

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$1.796

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$1.796

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DigiPath Technology Company

USA . 85 parts In-Stock

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$1.796

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$1.796

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AZTECH Wire

Italy . 593 parts In-Stock

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$14.200

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Component Stockers USA

USA . 249 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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RC Electronics

USA . 16,440 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Kepictronics

USA . 6,180 parts In-Stock

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Perfect Parts

USA . 5,929 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,797 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,454 parts In-Stock

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Corphita

USA . 1,531 parts In-Stock

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Parana Technologies

USA . 535 parts In-Stock

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$1.142

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535

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$1.142

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Overview

Unlock the potential of your power control applications with the STGB20NC60VT4 from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers this exceptional IGBT that combines remarkable efficiency with a robust design, perfect for demanding environments. With superior thermal performance and fast switching capabilities, elevate your projects while ensuring reliability and longevity. Experience unmatched value and performance tailored for your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body enhances durability and provides effective insulation, making it suitable for harsh environments.

Polarity or Channel Type: N-CHANNEL

N-channel configuration offers better electron mobility, leading to higher efficiency in power control applications.

Configuration: SINGLE

A single configuration streamlines the design, making the device easy to integrate into various applications without complexity.

Transistor Application: POWER CONTROL

Optimized for power control, this IGBT ensures reliable performance in managing large power loads and switching applications.

Surface Mount: YES

Surface mount technology allows for compact designs, saving valuable board space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular shape enables efficient utilization of board space, allowing for denser circuit layout.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and ease of assembly in surface mount applications.

Nominal Turn Off Time (toff): 280 ns

A turn-off time of 280 ns ensures rapid switching, which is critical for high-frequency applications and enhances system efficiency.

No. of Terminals: 2

With only two terminals, the device simplifies design requirements, making it easier to integrate into circuits.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating of 200 W allows the IGBT to handle substantial power loads without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style maximizes design flexibility and can be used in space-constrained applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this IGBT can perform reliably in demanding thermal environments.

Maximum Collector-Emitter Voltage: 600 V

Withstanding up to 600 V makes this product suitable for high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as a material offers excellent semiconductor properties, ensuring device reliability and efficiency.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V provides adequate control over the transistor, enhancing switching performance.

Maximum Collector Current (IC): 60 A

The capacity to handle up to 60 A of collector current makes this IGBT suitable for high-current applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A moderate threshold voltage ensures efficient gate control and responsiveness during operation.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers excellent solderability and corrosion resistance, improving long-term reliability.

Terminal Position: SINGLE

Single terminal position streamlines design and enhances the ease of integration into circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum peak reflow time of 30 seconds, this IGBT is compatible with standard soldering processes used in manufacturing.

Peak Reflow Temperature °C: 245

The ability to withstand peak reflow temperatures of up to 245 °C ensures compatibility with modern assembly techniques.

Nominal Turn On Time (ton): 42.5 ns

A fast turn-on time of 42.5 ns improves switching speed, making it ideal for high-performance power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB20NC60VT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

280 ns

Nominal Turn On Time (ton):

42.5 ns

Trade Compliance

STGB20NC60VT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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