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STGFW40V60F

STMicroelectronics

STGFW40V60F by STMicroelectronics

STGFW40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 241ns, ton of 73ns, and can operate at temperatures ranging from -55°C to 175°C.

Median Price

$4.010

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 207 parts In-Stock

1+ parts

$3.289

100+ parts

$1.999

1k+ parts

$1.923

10k+ parts

-

207

$3.289

$1.999

$1.923

-

Mouser Electronics

USA . 76 parts In-Stock

1+ parts

$3.620

100+ parts

$2.470

1k+ parts

$2.460

10k+ parts

-

76

$3.620

$2.470

$2.460

-

DigiKey

USA . 196 parts In-Stock

1+ parts

$4.010

100+ parts

$2.232

1k+ parts

$1.840

10k+ parts

-

196

$4.010

$2.232

$1.840

-

Newark

USA . 186 parts In-Stock

1+ parts

$4.130

100+ parts

$2.320

1k+ parts

$2.200

10k+ parts

-

186

$4.130

$2.320

$2.200

-

Element14

Singapore . 207 parts In-Stock

1+ parts

$284.520

100+ parts

$194.130

1k+ parts

$193.380

10k+ parts

$185.160

207

$284.520

$194.130

$193.380

$185.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,015 parts In-Stock

1+ parts

$3.125

100+ parts

-

1k+ parts

-

10k+ parts

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2,015

$3.125

-

-

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Vyrian

USA . 6,540 parts In-Stock

1+ parts

-

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-

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6,540

-

-

-

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Anansix

USA . 2,018 parts In-Stock

1+ parts

-

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2,018

-

-

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R&J Components

USA . 296 parts In-Stock

1+ parts

-

100+ parts

-

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296

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,302 parts In-Stock

1+ parts

$0.531

100+ parts

-

1k+ parts

$0.478

10k+ parts

-

1,302

$0.531

-

$0.478

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MKK Technologies

India . 1,586 parts In-Stock

1+ parts

$0.998

100+ parts

-

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-

10k+ parts

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1,586

$0.998

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-

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DigiPath Technology Company

USA . 1,586 parts In-Stock

1+ parts

$0.998

100+ parts

-

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-

10k+ parts

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1,586

$0.998

-

-

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Continental Prestige Electronics

USA . 230 parts In-Stock

1+ parts

$2.440

100+ parts

$1.790

1k+ parts

$1.590

10k+ parts

-

230

$2.440

$1.790

$1.590

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Corphita

USA . 175 parts In-Stock

1+ parts

$2.960

100+ parts

-

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-

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175

$2.960

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Component Stockers USA

USA . 293 parts In-Stock

1+ parts

$3.930

100+ parts

$2.670

1k+ parts

-

10k+ parts

-

293

$3.930

$2.670

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-

Microchip USA

USA . 480 parts In-Stock

1+ parts

$24.700

100+ parts

-

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480

$24.700

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-

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

-

-

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Parana Technologies

USA . 1,081 parts In-Stock

1+ parts

-

100+ parts

$0.635

1k+ parts

-

10k+ parts

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1,081

-

$0.635

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Perfect Parts

USA . 437 parts In-Stock

1+ parts

-

100+ parts

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437

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Overview

Enhance your power control applications with the STGFW40V60F Insulated Gate Bipolar Transistor by STMicroelectronics. Designed with precision and quality in mind, this N-CHANNEL transistor offers a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, making it ideal for high-power tasks. With a nominal turn off time of 241ns and a maximum power dissipation of 98.5W, this single-configured transistor provides reliable performance in a variety of settings. Trust in STMicroelectronics to deliver top-of-the-line components that bring value, efficiency, and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, increasing the durability and reliability of the product.

Maximum VCEsat: 2.3 V

Low VCEsat reduces power losses and improves efficiency of the power control application.

Nominal Turn Off Time (toff): 241 ns

Fast turn off time allows for precise control and handling of power within the circuit.

Maximum Power Dissipation (Abs): 98.5 W

Can handle high power levels, making it suitable for demanding power control applications.

Maximum Operating Temperature: 175 °C

Can operate efficiently at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows for safe operation in high voltage applications.

Maximum Collector Current (IC): 80 A

Capable of handling high collector currents, making it suitable for high power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW40V60F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

73 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGFW40V60F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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