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STGB30NC60KT4

STMicroelectronics

STGB30NC60KT4 by STMicroelectronics

STGB30NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 41 ns, toff: 290 ns). Ideal for high-performance power management in compact designs.

Median Price

$4.310

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 876 parts In-Stock

1+ parts

$4.310

100+ parts

$3.230

1k+ parts

$2.800

10k+ parts

-

876

$4.310

$3.230

$2.800

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Vyrian

USA . 8,698 parts In-Stock

1+ parts

-

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8,698

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Anansix

USA . 1,506 parts In-Stock

1+ parts

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1,506

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-

-

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Digiode

USA . 315 parts In-Stock

1+ parts

-

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315

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,814 parts In-Stock

1+ parts

$1.297

100+ parts

-

1k+ parts

$1.167

10k+ parts

-

1,814

$1.297

-

$1.167

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MKK Technologies

India . 228 parts In-Stock

1+ parts

$2.439

100+ parts

-

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228

$2.439

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DigiPath Technology Company

USA . 228 parts In-Stock

1+ parts

$2.439

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-

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228

$2.439

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AZTECH Wire

Italy . 252 parts In-Stock

1+ parts

$16.180

100+ parts

-

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252

$16.180

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Microchip USA

USA . 324 parts In-Stock

1+ parts

$18.154

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324

$18.154

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Component Stockers USA

USA . 798 parts In-Stock

1+ parts

$99.990

100+ parts

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798

$99.990

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Perfect Parts

USA . 3,287 parts In-Stock

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3,287

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Parana Technologies

USA . 1,698 parts In-Stock

1+ parts

-

100+ parts

$1.551

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1,698

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$1.551

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Corphita

USA . 1,524 parts In-Stock

1+ parts

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1,524

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Overview

Elevate your power control solutions with the STGB30NC60KT4 IGBT from STMicroelectronics—crafted for excellence and reliability. With its robust construction and superior performance in demanding applications, this N-channel transistor ensures efficient energy management and thermal stability. Experience faster switching times and enhanced durability, empowering your designs in automation, renewable energy, and industrial systems. Trust in STMicroelectronics’ legacy of innovation to drive your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy construction ensures reliability and robustness in various operating environments.

Polarity or Channel Type: N-CHANNEL

N-channel configuration generally offers better performance and efficiency for power control applications.

Configuration: SINGLE

Single configuration enables simple circuit design while maintaining performance integrity.

Transistor Application: POWER CONTROL

Specifically designed for power control, making it suitable for high-efficiency applications.

Surface Mount: YES

Surface mount design offers space-saving benefits and facilitates automated assembly processes.

Package Shape: RECTANGULAR

Rectangular package shape optimizes space on printed circuit boards and allows for better thermal management.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical and electrical connections, simplifying PCB soldering.

Nominal Turn Off Time (toff): 290 ns

Fast turn-off time ensures rapid switching capabilities, enhancing efficiency in power conversion.

No. of Terminals: 2

Two terminals make it easy to integrate into various circuits without complexity.

Maximum Power Dissipation (Abs): 185 W

High power dissipation capability allows the device to handle substantial loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package lends itself to compact designs, perfect for space-constrained applications.

Maximum Operating Temperature: 150 °C

High operating temperature improves reliability in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating makes it suitable for applications requiring significant voltage handling.

Transistor Element Material: SILICON

Silicon materials offer excellent electrical performance and reliability.

Maximum Gate-Emitter Voltage: 20 V

Flexible gate-emitter voltage range allows compatibility with various control circuits.

Maximum Collector Current (IC): 60 A

Ability to handle up to 60 A ensures suitability for high-current applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Threshold voltage level ensures effective switching, contributing to overall circuit efficiency.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and design.

Nominal Turn On Time (ton): 41 ns

Quick turn-on time enhances responsiveness in fast-switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30NC60KT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

290 ns

Nominal Turn On Time (ton):

41 ns

Trade Compliance

STGB30NC60KT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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