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SINGLE Insulated Gate Bipolar Transistors (IGBT) 238

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW30N60TFKSA1 by Infineon Technologies

IGW30N60TFKSA1

Infineon Technologies

IGW30N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 382ns and nominal turn-on time of 50ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 175°C.

FAST SWITCHING

COLLECTOR

60 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

382 ns

50 ns

IGP50N60TXKSA1 by Infineon Technologies

IGP50N60TXKSA1

Infineon Technologies

IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.

FAST SWITCHING

COLLECTOR

100 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

396 ns

60 ns

IGW50N60TFKSA1 by Infineon Technologies

IGW50N60TFKSA1

Infineon Technologies

IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.

FAST SWITCHING

COLLECTOR

100 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

396 ns

60 ns

IGW08T120FKSA1 by Infineon Technologies

IGW08T120FKSA1

Infineon Technologies

IGW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and a turn-on time of 66ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.

COLLECTOR

16 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

710 ns

66 ns

IGW15T120FKSA1 by Infineon Technologies

IGW15T120FKSA1

Infineon Technologies

IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.

COLLECTOR

30 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

720 ns

85 ns

IGW25T120FKSA1 by Infineon Technologies

IGW25T120FKSA1

Infineon Technologies

IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.

COLLECTOR

50 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

790 ns

82 ns

IGW30N100TFKSA1 by Infineon Technologies

IGW30N100TFKSA1

Infineon Technologies

Infineon's IGW30N100TFKSA1 is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 569ns toff. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates up to 175°C.

60 A

1000 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

569 ns

54 ns

IGW75N60TFKSA1 by Infineon Technologies

IGW75N60TFKSA1

Infineon Technologies

IGW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 150A IC, and 175°C max temp. Ideal for power control applications due to its single configuration and fast ton of 69ns. The package style is flange mount with through-hole terminals.

COLLECTOR

150 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

401 ns

69 ns

SGB30N60ATMA1 by Infineon Technologies

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; Maximum Collector-Emitter Voltage: 600 V; JESD-30 Code: R-PSSO-G2;

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

SGP10N60AXKSA1 by Infineon Technologies

SGP10N60AXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

224 ns

40 ns

SGW10N60AFKSA1 by Infineon Technologies

SGW10N60AFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

224 ns

40 ns

SGP15N120XKSA1 by Infineon Technologies

SGP15N120XKSA1

Infineon Technologies

SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.

COLLECTOR

30 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

683 ns

68 ns

SGW15N120FKSA1 by Infineon Technologies

SGW15N120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; No. of Elements: 1; Case Connection: COLLECTOR;

COLLECTOR

30 A

1200 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

683 ns

68 ns

SGW20N60FKSA1 by Infineon Technologies

SGW20N60FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;

LOW CONDUCTION LOSS

COLLECTOR

40 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

313 ns

66 ns

SGP20N60HSXKSA1 by Infineon Technologies

SGP20N60HSXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 36 A; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;

COLLECTOR

36 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

235 ns

30 ns

SGW20N60HSFKSA1 by Infineon Technologies

SGW20N60HSFKSA1

Infineon Technologies

Infineon's SGW20N60HSFKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 36A max collector current, and 30ns turn on time. Ideal for motor control applications due to its single configuration and through-hole terminals. Operating at up to 150°C, it offers a fast switching speed of 235ns.

COLLECTOR

36 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

235 ns

30 ns

SGW30N60FKSA1 by Infineon Technologies

SGW30N60FKSA1

Infineon Technologies

SGW30N60FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 41A. It has a nominal turn-off time of 391ns and a turn-on time of 78ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

SGP30N60HSXKSA1 by Infineon Technologies

SGP30N60HSXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;

COLLECTOR

41 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

39 ns

SGW30N60HSFKSA1 by Infineon Technologies

SGW30N60HSFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;

COLLECTOR

41 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

39 ns

SGW25N120FKSA1 by Infineon Technologies

SGW25N120FKSA1

Infineon Technologies

Infineon's SGW25N120FKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 46A max collector current. Ideal for power control applications, it has a single configuration, 862ns turn-off time, and operates up to 150°C.

COLLECTOR

46 A

1200 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

862 ns

86 ns

SGW50N60HSFKSA1 by Infineon Technologies

SGW50N60HSFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Application: MOTOR CONTROL; Case Connection: COLLECTOR;

COLLECTOR

100 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

370 ns

79 ns

IGW40N60H3FKSA1 by Infineon Technologies

IGW40N60H3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3; Nominal Turn On Time (ton): 48 ns;

80 A

600 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

249 ns

48 ns

IGA30N60H3XKSA1 by Infineon Technologies

IGA30N60H3XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; No. of Elements: 1; Nominal Turn On Time (ton): 40 ns;

ISOLATED

18 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

40 ns

IGP20N60H3XKSA1 by Infineon Technologies

IGP20N60H3XKSA1

Infineon Technologies

IGP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT transistor with a max voltage of 600V and max current of 40A. It has a turn on time of 31ns and turn off time of 241ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 175°C.

40 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

241 ns

31 ns

IGW50N60H3FKSA1 by Infineon Technologies

IGW50N60H3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; JEDEC-95 Code: TO-247;

100 A

600 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

297 ns

54 ns

IGW40T120FKSA1 by Infineon Technologies

IGW40T120FKSA1

Infineon Technologies

IGW40T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 75A. It is designed for power control applications and has a nominal turn-off time of 700ns.

COLLECTOR

75 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

92 ns

IGW75N60H3FKSA1 by Infineon Technologies

IGW75N60H3FKSA1

Infineon Technologies

Infineon Technologies' IGW75N60H3FKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. Ideal for power control applications, it features a plastic/epoxy package body, single configuration, and through-hole terminal form.

COLLECTOR

140 A

600 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

IGC07T120T8LX1SA2 by Infineon Technologies

IGC07T120T8LX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XUUC-N2;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON

2.02 V

IGW100N60H3FKSA1 by Infineon Technologies

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 140 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

140 A

600 V

SINGLE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

333 ns

72 ns

2.3 V

IGW50N65F5FKSA1 by Infineon Technologies

IGW50N65F5FKSA1

Infineon Technologies

IGW50N65F5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -40 to 175 °C.

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

305 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

35 ns

2.1 V

IGW50N65H5FKSA1 by Infineon Technologies

IGW50N65H5FKSA1

Infineon Technologies

IGW50N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

305 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

35 ns

2.1 V

IGC15T65QEX1SA1 by Infineon Technologies

IGC15T65QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Terminal Form: NO LEAD; No. of Elements: 1;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.32 V

IGC18T120T8QX1SA1 by Infineon Technologies

IGC18T120T8QX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Style (Meter): UNCASED CHIP; Maximum VCEsat: 2.42 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC27T120T8QX1SA1 by Infineon Technologies

IGC27T120T8QX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC39T65QEX1SA1 by Infineon Technologies

IGC39T65QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Terminals: 3; No. of Elements: 1;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.22 V

IGC50T120T8RQX1SA1 by Infineon Technologies

IGC50T120T8RQX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N2; Transistor Application: POWER CONTROL; Maximum VCEsat: 2.42 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC54T65R3QEX1SA1 by Infineon Technologies

IGC54T65R3QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V; Maximum VCEsat: 2.22 V;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N9

1

9

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.22 V

IGC99T120T8RQX1SA1 by Infineon Technologies

IGC99T120T8RQX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N5;

1200 V

SINGLE

6.4 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

SIGC39T60EX1SA3 by Infineon Technologies

SIGC39T60EX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.85 V;

600 V

SINGLE

6.5 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.85 V

SIGC76T65R3EX1SA1 by Infineon Technologies

SIGC76T65R3EX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel;

650 V

SINGLE

6.4 V

20 V

R-XUUC-N9

1

9

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.2 V

STGB40V60F by STMicroelectronics

STGB40V60F

STMicroelectronics

STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

283 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGP40V60F by STMicroelectronics

STGP40V60F

STMicroelectronics

STGP40V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 241ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

283 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGB20V60F by STMicroelectronics

STGB20V60F

STMicroelectronics

STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGB30V60F by STMicroelectronics

STGB30V60F

STMicroelectronics

STGB30V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 225ns, ton of 59ns, and can handle up to 260W power dissipation. Suitable for surface mount with operating temperature range from -55°C to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGFW30V60F by STMicroelectronics

STGFW30V60F

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;

ISOLATED

60 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGP20V60F by STMicroelectronics

STGP20V60F

STMicroelectronics

STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGP30V60F by STMicroelectronics

STGP30V60F

STMicroelectronics

STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGW30V60F by STMicroelectronics

STGW30V60F

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;

60 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V