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SGW30N60FKSA1

Infineon Technologies

SGW30N60FKSA1 by Infineon Technologies

SGW30N60FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 41A. It has a nominal turn-off time of 391ns and a turn-on time of 78ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.

Median Price

$4.085

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 572 parts In-Stock

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DigiKey

USA . 332 parts In-Stock

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$3.920

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$3.920

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$3.920

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$3.920

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$3.920

Verical

USA . 240 parts In-Stock

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$4.250

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$3.800

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$3.575

240

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$4.250

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$3.575

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Digiode

USA . 585 parts In-Stock

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$3.582

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Vyrian

USA . 6,760 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 11,969 parts In-Stock

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$1.273

100+ parts

$1.222

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$1.171

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11,969

$1.273

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$1.171

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Ampacity Inc.

Singapore . 115 parts In-Stock

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$2.750

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Corphita

USA . 903 parts In-Stock

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$3.393

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$3.393

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Microchip USA

USA . 285 parts In-Stock

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$23.530

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$23.530

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

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Netroflash

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Overview

Upgrade your power control systems with the SGW30N60FKSA1 from Infineon Technologies. As a trusted manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that offer exceptional performance and reliability. Ideal for a wide range of applications, this N-CHANNEL transistor provides superior power control in a compact and efficient package. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 391ns, this transistor is designed to meet your power needs with precision. Trust Infineon to provide you with the best in power control technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the IGBT easy to handle and affordable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher efficiency, making them suitable for power control applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and layout, making it easier to integrate into existing systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in controlling high power levels.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy mounting in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and easier soldering onto circuit boards.

Nominal Turn Off Time (toff): 391 ns

Fast turn-off time helps improve switching efficiency and reduce power losses in high-frequency applications.

No. of Terminals: 3

Simple three-terminal design simplifies connections and reduces complexity in the circuit layout.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mechanical mounting and efficient heat dissipation for reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and safety in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating allows the IGBT to handle high voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

Silicon material provides excellent semiconductor properties, ensuring high performance and reliability in power control applications.

Maximum Collector Current (IC): 41 A

High collector current rating allows the IGBT to handle large currents, suitable for high-power applications.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and good solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies connections and reduces complexity in the circuit layout.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and reliable performance in power control applications.

Nominal Turn On Time (ton): 78 ns

Fast turn-on time improves switching speed and efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGW30N60FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

391 ns

Nominal Turn On Time (ton):

78 ns

Trade Compliance

SGW30N60FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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