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IGW75N60H3FKSA1

Infineon Technologies

IGW75N60H3FKSA1 by Infineon Technologies

Infineon Technologies' IGW75N60H3FKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. Ideal for power control applications, it features a plastic/epoxy package body, single configuration, and through-hole terminal form.

Median Price

$6.650

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 230 parts In-Stock

1+ parts

$6.510

100+ parts

$3.750

1k+ parts

-

10k+ parts

$3.730

230

$6.510

$3.750

-

$3.730

DigiKey

USA . 110 parts In-Stock

1+ parts

$6.550

100+ parts

$3.742

1k+ parts

$2.671

10k+ parts

$2.629

110

$6.550

$3.742

$2.671

$2.629

Newark

USA . 53 parts In-Stock

1+ parts

$6.750

100+ parts

$3.530

1k+ parts

$3.210

10k+ parts

-

53

$6.750

$3.530

$3.210

-

Element14

Singapore . 235 parts In-Stock

1+ parts

$7.630

100+ parts

$5.124

1k+ parts

$4.807

10k+ parts

-

235

$7.630

$5.124

$4.807

-

Farnell

UK . 235 parts In-Stock

1+ parts

$8.019

100+ parts

$5.199

1k+ parts

$4.162

10k+ parts

-

235

$8.019

$5.199

$4.162

-

Verical

USA . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30

-

-

-

-

Rochester

USA . 15 parts In-Stock

1+ parts

-

100+ parts

$2.620

1k+ parts

$2.350

10k+ parts

$2.210

15

-

$2.620

$2.350

$2.210

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 287 parts In-Stock

1+ parts

$3.344

100+ parts

-

1k+ parts

-

10k+ parts

-

287

$3.344

-

-

-

Vyrian

USA . 4,892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,892

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 9,667 parts In-Stock

1+ parts

$0.479

100+ parts

$0.460

1k+ parts

$0.441

10k+ parts

-

9,667

$0.479

$0.460

$0.441

-

Corphita

USA . 114 parts In-Stock

1+ parts

$3.168

100+ parts

-

1k+ parts

-

10k+ parts

-

114

$3.168

-

-

-

Component Stockers USA

USA . 487 parts In-Stock

1+ parts

$7.060

100+ parts

$5.050

1k+ parts

$4.730

10k+ parts

-

487

$7.060

$5.050

$4.730

-

Continental Prestige Electronics

USA . 286 parts In-Stock

1+ parts

$7.400

100+ parts

$4.780

1k+ parts

-

10k+ parts

-

286

$7.400

$4.780

-

-

Microchip USA

USA . 5,567 parts In-Stock

1+ parts

$22.512

100+ parts

-

1k+ parts

-

10k+ parts

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5,567

$22.512

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,000

-

-

-

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Perfect Parts

USA . 866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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866

-

-

-

-

Overview

Enhance your power control applications with the Infineon Technologies IGW75N60H3FKSA1 Insulated Gate Bipolar Transistor. Crafted with precision and expertise by a leading manufacturer, this N-channel transistor offers superior quality and reliability. Its single configuration and high-performance silicon element material ensure optimal power control efficiency. Whether you're looking to optimize energy consumption or boost overall performance, this transistor's 600V collector-emitter voltage and 140A collector current make it an ideal choice. Trust Infineon Technologies to deliver cutting-edge solutions that drive success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and higher switching speeds compared to P-channel, making them more efficient for power control applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency in controlling high power loads.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, ideal for high current applications.

No. of Terminals: 3

Simplified connection setup with only three terminals, reducing the risk of wiring errors.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure attachment to heatsinks or other mounting surfaces, enhancing thermal performance.

Maximum Collector-Emitter Voltage: 600 V

Can withstand high voltage levels, making it suitable for applications that require high voltage switching.

Transistor Element Material: SILICON

Silicon offers high thermal conductivity and efficiency, ensuring reliable performance in various operating conditions.

Maximum Collector Current (IC): 140 A

With a high maximum collector current rating, this IGBT can handle large power loads with ease.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies wiring configuration, making installation easier for users.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and thermal management, preventing overheating and ensuring long-term reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW75N60H3FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

IGW75N60H3FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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