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IGW75N60TFKSA1

Infineon Technologies

IGW75N60TFKSA1 by Infineon Technologies

IGW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 150A IC, and 175°C max temp. Ideal for power control applications due to its single configuration and fast ton of 69ns. The package style is flange mount with through-hole terminals.

Median Price

$4.710

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,216 parts In-Stock

1+ parts

$3.430

100+ parts

$3.220

1k+ parts

$2.920

10k+ parts

-

1,216

$3.430

$3.220

$2.920

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Farnell

UK . 100 parts In-Stock

1+ parts

$4.280

100+ parts

$1.990

1k+ parts

$1.880

10k+ parts

-

100

$4.280

$1.990

$1.880

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Chip1Stop

Japan . 448 parts In-Stock

1+ parts

$5.140

100+ parts

-

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-

10k+ parts

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448

$5.140

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-

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DigiKey

USA . 1,895 parts In-Stock

1+ parts

$5.160

100+ parts

$2.891

1k+ parts

$2.025

10k+ parts

$1.909

1,895

$5.160

$2.891

$2.025

$1.909

Mouser Electronics

USA . 206 parts In-Stock

1+ parts

$5.160

100+ parts

$2.400

1k+ parts

$2.190

10k+ parts

-

206

$5.160

$2.400

$2.190

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Arrow

USA . 210 parts In-Stock

1+ parts

$6.039

100+ parts

$2.980

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-

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210

$6.039

$2.980

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Element14

Singapore . 100 parts In-Stock

1+ parts

$7.480

100+ parts

$3.560

1k+ parts

$3.480

10k+ parts

-

100

$7.480

$3.560

$3.480

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Future Electronics

Canada . 1,200 parts In-Stock

1+ parts

-

100+ parts

$2.920

1k+ parts

$2.810

10k+ parts

$2.760

1,200

-

$2.920

$2.810

$2.760

RS (Exports)

UK . 568 parts In-Stock

1+ parts

-

100+ parts

$3.770

1k+ parts

$3.580

10k+ parts

-

568

-

$3.770

$3.580

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Verical

USA . 448 parts In-Stock

1+ parts

-

100+ parts

$2.890

1k+ parts

-

10k+ parts

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448

-

$2.890

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EBV Elektronik

Germany . 240 parts In-Stock

1+ parts

-

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240

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 712 parts In-Stock

1+ parts

$3.258

100+ parts

-

1k+ parts

-

10k+ parts

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712

$3.258

-

-

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TME

Poland . 76 parts In-Stock

1+ parts

$4.850

100+ parts

$3.090

1k+ parts

-

10k+ parts

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76

$4.850

$3.090

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Vyrian

USA . 7,145 parts In-Stock

1+ parts

-

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7,145

-

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Chip Stock

USA . 2,600 parts In-Stock

1+ parts

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2,600

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IBS Electronics

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

$4.095

1k+ parts

$3.941

10k+ parts

$3.871

1,200

-

$4.095

$3.941

$3.871

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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300

-

-

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NAC Semi

USA . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.180

10k+ parts

-

240

-

-

$4.180

-

Micros

Poland . 30 parts In-Stock

1+ parts

-

100+ parts

$4.410

1k+ parts

$4.410

10k+ parts

$4.410

30

-

$4.410

$4.410

$4.410

Partservice

France . 30 parts In-Stock

1+ parts

-

100+ parts

$4.311

1k+ parts

$4.311

10k+ parts

$4.311

30

-

$4.311

$4.311

$4.311

Micros sp.j. W. Kędra i J. Lic

Poland . 30 parts In-Stock

1+ parts

-

100+ parts

$4.618

1k+ parts

$4.618

10k+ parts

$4.618

30

-

$4.618

$4.618

$4.618

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 11,937 parts In-Stock

1+ parts

$0.843

100+ parts

$0.809

1k+ parts

$0.776

10k+ parts

-

11,937

$0.843

$0.809

$0.776

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Corohmni

South Africa . 227 parts In-Stock

1+ parts

$1.797

100+ parts

-

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227

$1.797

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Ampacity Inc.

Singapore . 403 parts In-Stock

1+ parts

$2.500

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403

$2.500

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Corphita

USA . 800 parts In-Stock

1+ parts

$3.087

100+ parts

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800

$3.087

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Continental Prestige Electronics

USA . 19 parts In-Stock

1+ parts

$5.150

100+ parts

$3.290

1k+ parts

$3.210

10k+ parts

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19

$5.150

$3.290

$3.210

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QUARKTWIN TECHNOLOGY LTD

USA . 4,697 parts In-Stock

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4,697

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Argo Parts USA

USA . 3,434 parts In-Stock

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3,434

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 466 parts In-Stock

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466

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Glotronic Ltd.

UK . 168 parts In-Stock

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168

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Enhance your power control applications with the IGW75N60TFKSA1 by Infineon Technologies. Crafted with superior quality and precision engineering, this insulated gate bipolar transistor offers unmatched reliability and performance. Whether you're looking to optimize energy efficiency or enhance power distribution systems, this N-channel transistor delivers exceptional value and benefits. Trust in Infineon Technologies to provide innovative solutions for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and protection for the IGBT, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have higher mobility and conductivity, making them ideal for power control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to integrate and control in circuit designs, simplifying the overall setup.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT offers efficient performance and precise control over power output.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in various equipment and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, ensuring reliable operation in demanding environments.

Nominal Turn Off Time (toff): 401 ns

The fast turn-off time of 401 ns ensures quick switching and response times, enhancing overall efficiency and performance.

No. of Terminals: 3

With 3 terminals, this IGBT offers straightforward connectivity and easy integration into circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting and heat dissipation capabilities, contributing to the IGBT's reliability.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this IGBT can withstand high temperature conditions, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V allows for safe operation and control of high power systems.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high reliability and performance, making this IGBT a durable and efficient choice.

Maximum Collector Current (IC): 150 A

With a maximum collector current of 150 A, this IGBT can handle high power loads, suitable for demanding power control applications.

Terminal Finish: TIN

Tin terminal finish offers corrosion resistance and reliability, ensuring long-term performance and durability of the IGBT.

Terminal Position: SINGLE

Single terminal position simplifies the wiring and connection process, improving the overall usability and integration of the IGBT.

Case Connection: COLLECTOR

The collector case connection provides efficient heat dissipation and electrical isolation, contributing to the IGBT's reliability and performance.

Nominal Turn On Time (ton): 69 ns

The fast turn-on time of 69 ns ensures quick response and switching characteristics, enhancing the IGBT's efficiency and performance in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW75N60TFKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

401 ns

Nominal Turn On Time (ton):

69 ns

Trade Compliance

IGW75N60TFKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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