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IGW75N65H5XKSA1

Infineon Technologies

IGW75N65H5XKSA1 by Infineon Technologies

IGW75N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 650V and a max collector current of 120A. It has a nominal turn-off time of 232ns and a turn-on time of 61ns, making it ideal for power control applications requiring fast switching speeds. The transistor's package style is flange mount with through-hole terminals, suitable for high-power applications in various industries.

Median Price

$5.360

Lifecycle Status

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Chip1Stop

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$5.340

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$2.980

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225

$5.340

$2.980

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DigiKey

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$5.360

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$3.016

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$2.119

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$2.012

255

$5.360

$3.016

$2.119

$2.012

Element14

Singapore . 173 parts In-Stock

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$5.597

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$2.887

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$2.872

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173

$5.597

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$2.872

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Farnell

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$5.967

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$3.805

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$2.857

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173

$5.967

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$2.857

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Mouser Electronics

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$6.020

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$2.500

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$2.380

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168

$6.020

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$2.380

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Newark

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$6.120

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$3.490

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$3.290

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276

$6.120

$3.490

$3.290

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Verical

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$5.253

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480

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$5.253

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Arrow

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$2.268

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UK . 340 parts In-Stock

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$4.048

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$3.877

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340

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$4.048

$3.877

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Nova Conductors

Japan . 59 parts In-Stock

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$3.855

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59

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Digiode

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723

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TME

Poland . 5 parts In-Stock

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$2.630

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5

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Vyrian

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Aztec Data Supply Inc.

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$0.840

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48,494

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Ampacity Inc.

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Modulus Dynamics

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$3.486

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$3.347

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$3.207

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$3.486

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Corohmni

South Africa . 742 parts In-Stock

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742

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Aranea Global

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Argo Parts USA

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Corphita

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239

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Continental Prestige Electronics

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$4.430

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$4.719

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Allen Electronics Distributors

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570

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Microchip USA

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Overview

Power up your applications with the IGW75N65H5XKSA1 from Infineon Technologies! This Insulated Gate Bipolar Transistor (IGBT) offers reliable power control in a single configuration, making it ideal for a variety of industrial and consumer electronics. With a maximum collector-emitter voltage of 650V and a collector current of 120A, this transistor provides efficient performance in a wide range of operating temperatures. Trust Infineon Technologies to deliver high-quality components that will bring value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, making the product durable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher switching speeds compared to P-channel IGBTs, making them more efficient for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in managing high power levels.

No. of Terminals: 3

Having 3 terminals allows for easier connection and integration within circuits, simplifying the design process.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltage levels, making it suitable for applications where high voltage switching is required.

Maximum Collector Current (IC): 120 A

Capable of handling high current levels, making it suitable for power control applications that require high current switching.

Nominal Turn Off Time (toff): 232 ns

Fast turn-off time helps in reducing power losses and improving efficiency in power control applications.

Nominal Turn On Time (ton): 61 ns

Fast turn-on time ensures quick response and precise control in power switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW75N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

232 ns

Nominal Turn On Time (ton):

61 ns

Trade Compliance

IGW75N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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