Loading...

IGW30N100TFKSA1

Infineon Technologies

IGW30N100TFKSA1 by Infineon Technologies

Infineon's IGW30N100TFKSA1 is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 569ns toff. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates up to 175°C.

Median Price

$2.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5 parts In-Stock

1+ parts

$1.358

100+ parts

$1.150

1k+ parts

$1.121

10k+ parts

-

5

$1.358

$1.150

$1.121

-

Mouser Electronics

USA . 76 parts In-Stock

1+ parts

$4.320

100+ parts

$3.470

1k+ parts

$2.940

10k+ parts

$2.560

76

$4.320

$3.470

$2.940

$2.560

DigiKey

USA . 71 parts In-Stock

1+ parts

$5.800

100+ parts

-

1k+ parts

-

10k+ parts

-

71

$5.800

-

-

-

Rochester

USA . 149 parts In-Stock

1+ parts

-

100+ parts

$2.210

1k+ parts

$1.980

10k+ parts

$1.860

149

-

$2.210

$1.980

$1.860

Verical

USA . 5 parts In-Stock

1+ parts

-

100+ parts

$1.150

1k+ parts

$1.121

10k+ parts

-

5

-

$1.150

$1.121

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 804 parts In-Stock

1+ parts

$1.290

100+ parts

-

1k+ parts

-

10k+ parts

-

804

$1.290

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$2.171

-

-

-

Vyrian

USA . 4,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,902

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 59 parts In-Stock

1+ parts

$0.980

100+ parts

-

1k+ parts

-

10k+ parts

-

59

$0.980

-

-

-

Corphita

USA . 594 parts In-Stock

1+ parts

$1.222

100+ parts

-

1k+ parts

-

10k+ parts

-

594

$1.222

-

-

-

Modulus Dynamics

Lithuania . 2,343 parts In-Stock

1+ parts

$1.542

100+ parts

$1.480

1k+ parts

$1.419

10k+ parts

-

2,343

$1.542

$1.480

$1.419

-

Corohmni

South Africa . 265 parts In-Stock

1+ parts

$1.664

100+ parts

-

1k+ parts

-

10k+ parts

-

265

$1.664

-

-

-

Aztec Data Supply Inc.

USA . 2,981 parts In-Stock

1+ parts

$1.915

100+ parts

-

1k+ parts

-

10k+ parts

-

2,981

$1.915

-

-

-

Argo Parts USA

USA . 887 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

-

887

$2.171

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$2.171

-

-

-

Continental Prestige Electronics

USA . 248 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

$2.128

248

$2.171

-

-

$2.128

AZTECH Wire

Italy . 615 parts In-Stock

1+ parts

$11.820

100+ parts

-

1k+ parts

-

10k+ parts

-

615

$11.820

-

-

-

Microchip USA

USA . 8,788 parts In-Stock

1+ parts

$15.340

100+ parts

-

1k+ parts

-

10k+ parts

-

8,788

$15.340

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Perfect Parts

USA . 269 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

269

-

-

-

-

Overview

Enhance your power control applications with the IGW30N100TFKSA1 Insulated Gate Bipolar Transistor by Infineon Technologies. This single configuration transistor offers high-quality performance and reliability, thanks to its superior design and materials. With a maximum collector-emitter voltage of 1000V and a nominal turn on time of 54ns, this transistor is perfect for a wide range of power control tasks. Trust Infineon Technologies for cutting-edge technology that delivers exceptional value and efficiency to meet all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for better handling and longevity.

Polarity or Channel Type: N-CHANNEL

Efficient for switching applications and offers better control over power flow.

Configuration: SINGLE

Simplifies circuit design and integration into systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance.

Package Shape: RECTANGULAR

Allows for efficient space utilization and easy installation.

Terminal Form: THROUGH-HOLE

Facilitates through-hole soldering for secure connections.

Nominal Turn Off Time (toff): 569 ns

Fast turn-off time for quick power switching and improved efficiency.

No. of Terminals: 3

Simplified terminal configuration for easier connectivity.

Package Style (Meter): FLANGE MOUNT

Sturdy flange mount design for secure installation and heat dissipation.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance for versatile applications.

Maximum Collector-Emitter Voltage: 1000 V

Handles high voltage levels, suitable for various power control applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in power control.

Maximum Collector Current (IC): 60 A

High collector current rating for handling substantial power loads.

Terminal Finish: TIN

Tin finish for corrosion resistance and reliable electrical connections.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and maintenance.

Nominal Turn On Time (ton): 54 ns

Fast turn-on time for quick response and efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW30N100TFKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1000 V

Configuration:

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

569 ns

Nominal Turn On Time (ton):

54 ns

Trade Compliance

IGW30N100TFKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 11