Loading...

SINGLE Insulated Gate Bipolar Transistors (IGBT) 238

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC76T60R3EX1SA1 by Infineon Technologies

SIGC76T60R3EX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Elements: 1; Package Shape: RECTANGULAR;

600 V

SINGLE

R-XUUC-N10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

IGC27T120T8LX1SA2 by Infineon Technologies

IGC27T120T8LX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum Operating Temperature: -40 Cel; Terminal Form: NO LEAD;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

IGC36T120T8LX1SA1 by Infineon Technologies

IGC36T120T8LX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N3; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;

1200 V

SINGLE

R-XUUC-N3

1

3

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

IGC70T120T8RQX1SA1 by Infineon Technologies

IGC70T120T8RQX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Package Body Material: UNSPECIFIED; No. of Elements: 1;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC99T120T8RLX1SA3 by Infineon Technologies

IGC99T120T8RLX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

1200 V

SINGLE

6.4 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.97 V

IGC11T120T8LX1SA1 by Infineon Technologies

IGC11T120T8LX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.07 V; Maximum Gate-Emitter Threshold Voltage: 6.3 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

IGC18T120T8LX1SA2 by Infineon Technologies

IGC18T120T8LX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON; No. of Elements: 1;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON

2.07 V

SIGC15T60EX1SA4 by Infineon Technologies

SIGC15T60EX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Terminal Position: UPPER;

30 A

600 V

SINGLE

R-XUUC-N2

1

2

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

SIGC28T60SEX1SA2 by Infineon Technologies

SIGC28T60SEX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Application: POWER CONTROL; No. of Terminals: 3;

50 A

600 V

SINGLE

R-XUUC-N3

1

3

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

STGB30H65FB by STMicroelectronics

STGB30H65FB

STMicroelectronics

STGB30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65FB by STMicroelectronics

STGWA30H65FB

STMicroelectronics

STGWA30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.

60 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

AIGW50N65F5XKSA1 by Infineon Technologies

AIGW50N65F5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

35 ns

2.1 V

AIGW50N65H5XKSA1 by Infineon Technologies

AIGW50N65H5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON;

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

213 ns

33 ns

2.1 V

AIGW40N65H5XKSA1 by Infineon Technologies

AIGW40N65H5XKSA1

Infineon Technologies

AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

203 ns

31 ns

2.1 V

AIGW40N65F5XKSA1 by Infineon Technologies

AIGW40N65F5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Terminal Finish: TIN;

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

30 ns

2.1 V

RGW60TK65GVC11 by ROHM

RGW60TK65GVC11

ROHM

ROHM RGW60TK65GVC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 33A max collector current. Ideal for power control applications, featuring 209ns turn-off time, 50ns turn-on time, and a plastic/epoxy package body for through-hole mounting.

ISOLATED

33 A

650 V

SINGLE

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

209 ns

50 ns

PCFG40T65SQF by Onsemi

PCFG40T65SQF

Onsemi

PCFG40T65SQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.1V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -40 to 175 °C, this SQUARE-shaped chip is ideal for high-power electronic systems requiring efficient power management.

650 V

SINGLE

6.4 V

20 V

S-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.1 V

FGHL50T65SQ by Onsemi

FGHL50T65SQ

Onsemi

The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.

100 A

650 V

SINGLE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

268 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2.1 V

IXYH40N120C4 by Littelfuse

IXYH40N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 680 W; Maximum Collector Current (IC): 120 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

COLLECTOR

120 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

680 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

270 ns

63 ns

2.5 V

RGS80TSX2HRC11 by ROHM

RGS80TSX2HRC11

ROHM

ROHM's RGS80TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 629ns and operates b/w -40°C to 175°C.

80 A

1200 V

SINGLE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

555 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

629 ns

89 ns

2.1 V

IXGA20N120A3-TRL by IXYS Corporation

IXGA20N120A3-TRL

IXYS Corporation

IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.

LOW CONDUCTION LOSS

COLLECTOR

40 A

1200 V

SINGLE

5 V

20 V

TO-263AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

180 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1530 ns

66 ns

2.5 V

IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

LOW CONDUCTION LOSS

COLLECTOR

60 A

1200 V

SINGLE

380 ns

5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

300 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

580 ns

331 ns

53 ns

3.5 V

IXGT6N170AHV-TRL by IXYS Corporation

IXGT6N170AHV-TRL

IXYS Corporation

IXGT6N170AHV-TRL by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 7V, IC of 6A, and Pmax of 75W. Ideal for POWER CONTROL applications, it operates b/w -55 to 150 °C and features a fast turn-off time of 271ns.

COLLECTOR

6 A

1700 V

SINGLE

5 V

20 V

TO-268AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

75 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

271 ns

91 ns

7 V

IXYY8N90C3-TRL by IXYS Corporation

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

20 A

900 V

SINGLE

6 V

20 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

238 ns

39 ns

3 V

FGY75T95SQDT by Onsemi

FGY75T95SQDT

Onsemi

FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

RC-IGBT

150 A

950 V

SINGLE

6.4 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

434 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

198.8 ns

89.6 ns

2.11 V

IGC41T120T8QX7SA2 by Infineon Technologies

IGC41T120T8QX7SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC50T120T8RLX7SA2 by Infineon Technologies

IGC50T120T8RLX7SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 2.07 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 6.3 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

HGTP7N60A4-F102 by Onsemi

HGTP7N60A4-F102

Onsemi

HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.

LOW CONDUCTION LOSS

COLLECTOR

34 A

600 V

SINGLE

85 ns

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

235 ns

205 ns

17 ns

2.7 V

AFGHL50T65SQ by Onsemi

AFGHL50T65SQ

Onsemi

AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.

COLLECTOR

80 A

650 V

SINGLE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

268 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2.1 V

SIGC28T60EX1SA4 by Infineon Technologies

SIGC28T60EX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V; Reference Standard: IEC-62258-3;

600 V

SINGLE

6.5 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

IEC-62258-3

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.85 V

NCG225L75NF8M1 by Onsemi

NCG225L75NF8M1

Onsemi

NCG225L75NF8M1 by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 1.75V, Nominal Turn Off Time of 424ns, and Max Collector-Emitter Voltage of 750V. This SQUARE-shaped chip operates b/w -40 to 175 °C with a Gate-Emitter Threshold Voltage of 7.2V, making it suitable for high-power motor control systems.

750 V

SINGLE

7.2 V

20 V

S-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

AEC-Q101

YES

NO LEAD

UPPER

MOTOR CONTROL

SILICON

424 ns

468 ns

1.75 V

STGB50H65FB2 by STMicroelectronics

STGB50H65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR;

COLLECTOR

86 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

272 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

IXYT55N120A4HV by Littelfuse

IXYT55N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 175 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

175 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

650 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

910 ns

53 ns

1.8 V

STGB20H65FB2 by STMicroelectronics

STGB20H65FB2

STMicroelectronics

STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGP20H65FB2 by STMicroelectronics

STGP20H65FB2

STMicroelectronics

STGP20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

IXYT85N120A4HV by Littelfuse

IXYT85N120A4HV

Littelfuse

Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.

COLLECTOR

300 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1150 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

990 ns

73 ns

1.8 V

RGS30TSX2HRC11 by ROHM

RGS30TSX2HRC11

ROHM

ROHM's RGS30TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 267W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 189ns and operates b/w -40 to 175°C.

30 A

1200 V

SINGLE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

267 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

189 ns

39 ns

2.1 V

IXYT40N120A4HV by Littelfuse

IXYT40N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 140 A; No. of Terminals: 2;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

600 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1040 ns

67 ns

1.8 V

STGW100H65FB2-4 by STMicroelectronics

STGW100H65FB2-4

STMicroelectronics

STGW100H65FB2-4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2V, supports up to 441W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for high-efficiency switching in industrial systems.

COLLECTOR

145 A

650 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

441 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

255 ns

49 ns

2 V

IXGA48N60C3-TRL by Littelfuse

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

75 A

600 V

SINGLE

5.5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

300 W

YES

MATTE TIN

GULL WING

SINGLE

10

POWER CONTROL

SILICON

187 ns

45 ns

2.5 V

IXYH85N120C4 by Littelfuse

IXYH85N120C4

Littelfuse

Littelfuse IXYH85N120C4 is an N-CHANNEL IGBT with 1200V VCEsat, 240A IC, and 1150W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 317ns and high operating temperature range (-55°C to 175°C). Package style is FLANGE MOUNT with RECTANGULAR shape.

COLLECTOR

240 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1150 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

317 ns

95 ns

2.5 V

IXYX110N120C4 by Littelfuse

IXYX110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 310 A; Package Shape: RECTANGULAR;

COLLECTOR

310 A

1200 V

SINGLE

6.5 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V

IXYN110N120C4 by Littelfuse

IXYN110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 220 A; No. of Elements: 1;

ISOLATED

220 A

1200 V

SINGLE

6.5 V

20 V

R-PUFM-X4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

830 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V

IXYH55N120C4 by Littelfuse

IXYH55N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 175 Cel;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

650 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

222 ns

70 ns

2.5 V

IXYK110N120B4 by Littelfuse

IXYK110N120B4

Littelfuse

Littelfuse IXYK110N120B4 is an N-CHANNEL IGBT transistor with 1200V VCE, 340A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 1360W and operates b/w -55 to 175°C temperatures.

COLLECTOR

340 A

1200 V

SINGLE

6.5 V

20 V

TO-264AA

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

520 ns

95 ns

2.1 V

IXYK110N120C4 by Littelfuse

IXYK110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 310 A; Terminal Position: SINGLE;

COLLECTOR

310 A

1200 V

SINGLE

6.5 V

20 V

TO-264AA

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V