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IXYH85N120C4

Littelfuse

IXYH85N120C4 by Littelfuse

Littelfuse IXYH85N120C4 is an N-CHANNEL IGBT with 1200V VCEsat, 240A IC, and 1150W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 317ns and high operating temperature range (-55°C to 175°C). Package style is FLANGE MOUNT with RECTANGULAR shape.

Median Price

$13.837

Lifecycle Status

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6

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1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 205 parts In-Stock

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$12.320

100+ parts

$7.080

1k+ parts

$6.810

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205

$12.320

$7.080

$6.810

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Newark

USA . 305 parts In-Stock

1+ parts

$13.240

100+ parts

$10.480

1k+ parts

$9.770

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305

$13.240

$10.480

$9.770

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Element14

Singapore . 11 parts In-Stock

1+ parts

$13.837

100+ parts

$10.527

1k+ parts

$10.070

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11

$13.837

$10.527

$10.070

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DigiKey

USA . 317 parts In-Stock

1+ parts

$14.720

100+ parts

$11.918

1k+ parts

$10.165

10k+ parts

$9.324

317

$14.720

$11.918

$10.165

$9.324

Mouser Electronics

USA . 254 parts In-Stock

1+ parts

$15.710

100+ parts

-

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$8.280

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254

$15.710

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$8.280

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Nova Conductors

Japan . 34 parts In-Stock

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34

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Distributors (Availability)

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Ampacity Inc.

Singapore . 80 parts In-Stock

1+ parts

$9.640

100+ parts

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80

$9.640

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Continental Prestige Electronics

USA . 25 parts In-Stock

1+ parts

$11.250

100+ parts

$8.550

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25

$11.250

$8.550

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Microchip USA

USA . 5,999 parts In-Stock

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$38.220

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5,999

$38.220

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the unparalleled power and efficiency of the IXYH85N120C4 Insulated Gate Bipolar Transistor by Littelfuse. As a trusted manufacturer in the industry, Littelfuse delivers top-of-the-line products that excel in power control applications. The IXYH85N120C4 offers customers exceptional value with its high maximum collector-emitter voltage of 1200V, robust package style, and reliable operation in extreme temperatures. Elevate your projects with this N-channel transistor that provides superior performance and durability for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy package body material provides good insulation properties and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient current flow and control, making this IGBT suitable for power control applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation easier, suitable for applications requiring individual control of power.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling power output.

Maximum VCEsat: 2.5 V

Low maximum VCEsat value indicates minimal voltage drop when the transistor is conducting, leading to reduced power losses and improved efficiency.

Package Shape: RECTANGULAR

Rectangular package shape offers space-saving benefits and easier mounting options in various electronic circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and ensures stability in different mounting environments, making it suitable for industrial applications.

Nominal Turn Off Time (toff): 317 ns

Fast turn off time enables quick switching transitions, reducing power dissipation and improving overall performance in power control applications.

No. of Terminals: 3

Three terminals provide necessary connections for power control functions and allow for efficient operation in various circuit configurations.

Maximum Power Dissipation (Abs): 1150 W

High maximum power dissipation rating allows for handling large power levels without damaging the transistor, ensuring reliable operation in high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting options and efficient heat dissipation capabilities, suitable for high-power applications with thermal management requirements.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance in harsh operating conditions and extended duty cycles.

Maximum Collector-Emitter Voltage: 1200 V

High maximum collector-emitter voltage rating allows for handling high voltage levels, making it suitable for industrial power control applications.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and thermal conductivity, ensuring stable performance and reliability over a wide range of operating conditions.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage rating provides flexibility in gate control signals and ensures reliable operation in power control applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature tolerance allows for operation in cold environments without sacrificing performance, suitable for diverse application requirements.

Maximum Collector Current (IC): 240 A

High maximum collector current rating allows for handling large current levels, making it suitable for high-power applications requiring robust power control capabilities.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Low maximum gate-emitter threshold voltage ensures efficient gate control signals and optimal power switching performance in power control applications.

Terminal Position: SINGLE

Single terminal position simplifies wiring connections and offers convenience in circuit integration, suitable for applications where space is limited.

Case Connection: COLLECTOR

Collector case connection provides a direct path for current flow and enhances thermal management, ensuring efficient performance in power control applications.

Nominal Turn On Time (ton): 95 ns

Fast turn on time allows for quick activation of power control functions, improving response time and efficiency in electronic systems requiring rapid power switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH85N120C4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

317 ns

Nominal Turn On Time (ton):

95 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXYH85N120C4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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