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IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

Median Price

$8.960

Lifecycle Status

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3

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1k+

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Arrow

USA . 800 parts In-Stock

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Vyrian

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Microchip USA

USA . 5,562 parts In-Stock

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AZTECH Wire

Italy . 1,126 parts In-Stock

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Overview

Discover the IXGA30N120B3-TRL by IXYS Corporation, a high-quality Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. With a maximum VCEsat of 3.5V and a maximum collector-emitter voltage of 1200V, this single-channel transistor offers superior performance and reliability. Its compact rectangular package with gull wing terminals makes it easy to mount, while its fast turn-on and turn-off times ensure efficient power management. Trust in IXYS Corporation's expertise and experience in semiconductor technology to deliver exceptional value and benefits to your projects with the IXGA30N120B3-TRL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, making the product reliable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and faster switching speeds, making them energy-efficient and suitable for high-power applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and precise control over the power flow.

Maximum VCEsat: 3.5 V

Low saturation voltage results in less power dissipation and higher efficiency in power control applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into systems.

Terminal Form: GULL WING

Provides secure and reliable connections, ensuring stable performance under high currents.

Maximum Fall Time (tf): 380 ns

Fast switching speed allows for quick response time in power control applications.

Nominal Turn Off Time (toff): 331 ns

Quick turn-off time helps in regulating power flow effectively and efficiently.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity in system design.

Maximum Power Dissipation (Abs): 300 W

Can handle high power levels, making it suitable for demanding power control applications.

Package Style (Meter): SMALL OUTLINE

Compact design saves space and facilitates easy integration into systems.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without impacting performance.

Maximum Collector-Emitter Voltage: 1200 V

Can withstand high voltage levels, making it suitable for high-power applications.

Transistor Element Material: SILICON

Silicon material ensures high-performance and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage ensures protection against overvoltage conditions.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without impacting performance.

Maximum Collector Current (IC): 60 A

High collector current rating allows for handling large currents in power control applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low threshold voltage ensures quick and reliable switching operation.

Maximum Turn Off Time (toff): 580 ns

Quick turn-off time helps in efficient control and regulation of power flow.

Terminal Position: SINGLE

Simplifies circuit connections and reduces complexity in system design.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation, improving the overall performance and reliability of the product.

Nominal Turn On Time (ton): 53 ns

Fast turn-on time allows for quick response and precise control in power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA30N120B3-TRL attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

380 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

580 ns

Nominal Turn Off Time (toff):

331 ns

Nominal Turn On Time (ton):

53 ns

Maximum VCEsat:

3.5 V

Trade Compliance

IXGA30N120B3-TRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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