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IXGA20N120

Littelfuse

IXGA20N120 by Littelfuse

IXGA20N120 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and VCE of 1200V. Ideal for POWER CONTROL applications due to its high power dissipation capability (150W) and fast switching times (ton: 48ns, toff: 780ns).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 2,600 parts In-Stock

1+ parts

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2,600

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 75 parts In-Stock

1+ parts

$2.071

100+ parts

$1.885

1k+ parts

$1.698

10k+ parts

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75

$2.071

$1.885

$1.698

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Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$5.374

100+ parts

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1k+ parts

$5.159

10k+ parts

$5.159

1,200

$5.374

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$5.159

$5.159

Ampacity Inc.

Singapore . 719 parts In-Stock

1+ parts

$22.050

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719

$22.050

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Unlock the power of efficient and reliable control with the IXGA20N120 by Littelfuse. As a leading manufacturer in the industry, Littelfuse ensures top-notch quality and performance in their Insulated Gate Bipolar Transistors (IGBT). Ideal for power control applications, this N-CHANNEL transistor offers a fast fall time of 700 ns and a maximum collector-emitter voltage of 1200 V. With a maximum power dissipation of 150 W, this IGBT is designed to deliver unparalleled value and benefits to customers looking for a high-performance solution. Trust Littelfuse to provide you with the quality and reliability you need for your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities, especially in applications requiring high power handling.

Maximum VCEsat: 2.5 V

Low VCEsat helps in reducing power dissipation and improving efficiency in power control applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and mounting in various electronic systems.

Maximum Fall Time (tf): 700 ns

Fast fall time ensures quick switching speed, beneficial for power control applications that require rapid response times.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability enables the IGBT to handle large power loads efficiently.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the IGBT suitable for use in various environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating allows the IGBT to withstand high voltage levels in power control applications.

Maximum Collector Current (IC): 40 A

High collector current rating enables the IGBT to handle large current flows, essential for power control applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability and reliability in the assembly process.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA20N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

700 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1500 ns

Nominal Turn Off Time (toff):

780 ns

Nominal Turn On Time (ton):

48 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXGA20N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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